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The HN1C01FE-Y,LXHF is a dual NPN bipolar junction transistor (BJT) array manufactured by Toshiba Semiconductor and Storage. It features an ES-6 (SOT-563) surface-mount package designed for compact circuit integration. The device supports a maximum collector-emitter voltage (VCEO) of 50 V and a continuous collector current (IC) of 150 mA. Key electrical parameters include a DC current gain (hFE) ranging from 120 to 400, a transition frequency (fT) of 80 MHz, and a power dissipation rating of 100 mW. The component is qualified under the AEC-Q101 standard for automotive applications.
Verify the complete part number including suffixes such as LXHF against official Toshiba documentation to ensure correct packaging and material specifications. Confirm that the received components match the specified ES-6 package type and AEC-Q101 automotive grade requirements before integration into production lines.
Select this component when a dual NPN BJT array with high current gain and automotive qualification is required. Ensure the design accommodates the 100 mW power dissipation limit and 50 V voltage ratings. Compare against similar HN1C01 variants if different packaging or specific gain ranges are needed for the target application.
This part belongs to the HN1C01 series of dual NPN transistors produced by Toshiba Semiconductor and Storage. The series is widely used in consumer and automotive electronics for signal amplification and switching. The FE-LXHF suffix indicates specific manufacturing lot and packaging details consistent with Toshiba's automotive product line standards.
Direct substitutes may include other Toshiba dual NPN arrays like the HN1C01F-GR(TE85L,F) or HN1C01FU-GR,LF, provided pin compatibility and electrical ratings align. Verify package dimensions and thermal characteristics before substitution.