HN1C01FE-Y,LXHF

HN1C01FE-Y,LXHF

$0.28
  • Description:TRANS 2NPN DUAL 50V 150MA ES6
  • Series:-

SKU:707044239809 Category: Brand:

  
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Product Detailed Parameters

  • Description:TRANS 2NPN DUAL 50V 150MA ES6
  • Series:-
  • Mfr:Toshiba Semiconductor and Storage
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Transistor Type:2 NPN (Dual)
  • Current - Collector (Ic) (Max):150mA
  • Voltage - Collector Emitter Breakdown (Max):50V
  • Vce Saturation (Max) @ Ib, Ic:250mV @ 10mA, 100mA
  • Current - Collector Cutoff (Max):100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:120 @ 2mA, 6V
  • Power - Max:100mW
  • Frequency - Transition:80MHz
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:SOT-563, SOT-666
  • Supplier Device Package:ES6
  • Grade:Automotive
  • Qualification:AEC-Q101

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HN1C01FE-Y,LXHF

Overview

The HN1C01FE-Y,LXHF is a dual NPN bipolar junction transistor (BJT) array manufactured by Toshiba Semiconductor and Storage. It features an ES-6 (SOT-563) surface-mount package designed for compact circuit integration. The device supports a maximum collector-emitter voltage (VCEO) of 50 V and a continuous collector current (IC) of 150 mA. Key electrical parameters include a DC current gain (hFE) ranging from 120 to 400, a transition frequency (fT) of 80 MHz, and a power dissipation rating of 100 mW. The component is qualified under the AEC-Q101 standard for automotive applications.

Feature Summary

  • Dual NPN configuration within a single compact SMD package
  • Automotive-grade qualification ensuring reliability in vehicle electronics
  • High DC current gain suitable for general-purpose amplification

Applications

  • Audio-frequency general-purpose amplifier circuits
  • Automotive electronic control units requiring AEC-Q101 compliance
  • General-purpose switching and signal processing tasks

Procurement Notes

Verify the complete part number including suffixes such as LXHF against official Toshiba documentation to ensure correct packaging and material specifications. Confirm that the received components match the specified ES-6 package type and AEC-Q101 automotive grade requirements before integration into production lines.

Selection Notes

Select this component when a dual NPN BJT array with high current gain and automotive qualification is required. Ensure the design accommodates the 100 mW power dissipation limit and 50 V voltage ratings. Compare against similar HN1C01 variants if different packaging or specific gain ranges are needed for the target application.

Part Context

This part belongs to the HN1C01 series of dual NPN transistors produced by Toshiba Semiconductor and Storage. The series is widely used in consumer and automotive electronics for signal amplification and switching. The FE-LXHF suffix indicates specific manufacturing lot and packaging details consistent with Toshiba's automotive product line standards.

Replacement Considerations

Direct substitutes may include other Toshiba dual NPN arrays like the HN1C01F-GR(TE85L,F) or HN1C01FU-GR,LF, provided pin compatibility and electrical ratings align. Verify package dimensions and thermal characteristics before substitution.

HN1C01FE-Y,LXHFHN1C01FE-Y,LXHF
$0.28
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