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The HN1C01FU-GR,LXHF is a dual NPN bipolar junction transistor (BJT) array manufactured by Toshiba Semiconductor and Storage. It features a maximum collector-emitter voltage (VCEO) of 50 V and a continuous collector current (Ic) of 150 mA. The device operates with a DC current gain (hFE) ranging from 200 to 400 at 2 mA and 6 V. Its transition frequency (fT) is 80 MHz, and the maximum power dissipation (Pd) is 200 mW. The component is housed in a US6 surface-mount package and supports a maximum junction temperature of 125°C.
Verify the specific suffix GR,LXHF against official Toshiba documentation to confirm RoHS compliance and tape-and-reel packaging specifications. Ensure the ordering part number matches the exact electrical characteristics required for the target design, as minor suffix variations may indicate different packaging or environmental qualifications.
Select this component when a dual NPN BJT array is required for space-constrained designs. The 50V rating and 150mA current capacity suit low-to-medium power switching tasks. Verify that the 200mW power dissipation limit aligns with the thermal management capabilities of the printed circuit board layout.
This part belongs to the HN1C01 series of dual NPN pre-biased or standard BJT arrays from Toshiba. It shares core electrical parameters with variants like HN1C01F but differs in packaging and specific manufacturing lot codes. The LXHF suffix typically denotes lead-free and halogen-free compliance.
Direct substitutes include HN1C01FU-GR,LF and HN1C01FE-GR,LXHF if pin compatibility and identical electrical ratings are confirmed. Cross-reference datasheets to ensure package dimensions and thermal characteristics match the existing footprint.