HN1C01FU-Y,LF

Overview

The HN1C01FU-Y,LF is a dual NPN bipolar junction transistor (BJT) array manufactured by Toshiba Semiconductor and Storage. It features a US6 surface-mount package with a maximum collector current of 150 mA and a collector-emitter breakdown voltage (Vceo) of 50 V. The device exhibits a transition frequency (Ft) of 80 MHz and a power dissipation rating of 200 mW. Key electrical characteristics include a collector-base voltage (Vcbo) of 50 V, an emitter-base voltage (Vebo) of 5 V, and a saturation voltage of 100 mV. The component operates within a junction temperature range up to 125°C and complies with RoHS standards.

Feature Summary

• Dual NPN configuration integrated into a compact US6 surface-mount package for space-efficient circuit design.
• High-speed switching capability supported by an 80 MHz transition frequency suitable for RF and digital applications.
• Robust thermal performance with a 200 mW power dissipation rating and operation up to 125°C junction temperature.

Applications

• General-purpose switching circuits in consumer electronics
• Digital logic interface and level shifting applications
• Signal amplification in low-power audio or sensor interfaces

Procurement Notes

Verify the complete part number including the suffix -Y,LF to ensure compliance with RoHS directives and lead-free manufacturing standards. Confirm the US6 package variant matches your PCB footprint requirements. Cross-reference the manufacturer's latest datasheet for any updates on recommended operating conditions or handling precautions specific to this Toshiba Semiconductor and Storage component.

Selection Notes

Select this component when a dual NPN BJT array is required in a small US6 package. Ensure the 150 mA collector current and 50 V voltage ratings exceed your circuit's maximum demands. Consider the 80 MHz Ft for high-speed switching needs. Verify that the 200 mW power dissipation is sufficient for your thermal management strategy under expected load conditions.

Part Context

This component belongs to Toshiba's HN1C01 series of dual NPN transistor arrays. It shares core electrical specifications with variants like HN1C01FU-GR,LF but may differ in packaging or environmental compliance suffixes. The US6 package provides a compact solution compared to larger through-hole alternatives, fitting modern surface-mount assembly processes.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided source data. Engineers should consult official Toshiba documentation or authorized distributors for verified cross-references. Ensure any replacement matches the US6 package dimensions, pinout configuration, and electrical ratings such as Vceo, Ic, and Ft.