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Product Detailed Parameters
- Description：TRANS 2NPN DUAL 20V 300MA US6
- Series：-
- Mfr：Toshiba Semiconductor and Storage
- Package：Tape & Reel (TR),Cut Tape (CT)
- Transistor Type：2 NPN (Dual)
- Current - Collector (Ic) (Max)：300mA
- Voltage - Collector Emitter Breakdown (Max)：20V
- Vce Saturation (Max) @ Ib, Ic：100mV @ 3mA, 30mA
- Current - Collector Cutoff (Max)：100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce：200 @ 4mA, 2V
- Power - Max：200mW
- Frequency - Transition：30MHz
- Operating Temperature：150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：6-TSSOP, SC-88, SOT-363
- Supplier Device Package：US6
- Grade：-
- Qualification：-
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Overview
The Toshiba HN1C03FU is a dual NPN silicon epitaxial planar transistor housed in the US6 package. It features a collector-emitter voltage of 20V, a collector current of 300mA, and a power dissipation of 200mW. The device provides a high emitter-base voltage of 25V and a typical reverse DC current gain of 150. Electrical characteristics include a transition frequency of 30MHz and a low on-resistance of 1Ω. Designed for muting and switching applications, it integrates two devices within a compact ultra super mini footprint.
Feature Summary
- Integrates two NPN transistors within a compact US6 surface-mount package
- Features a high emitter-base breakdown voltage of 25V
- Provides a typical reverse DC current gain of 150 under specified conditions
- Designed specifically for muting and switching circuit applications
Applications
- Muting circuits
- Switching applications
Procurement Notes
Verify the specific ordering suffix against official Toshiba Semiconductor documentation to confirm exact packaging and tape-and-reel specifications. Confirm that the intended application environment remains within the absolute maximum ratings, particularly regarding junction temperature limits and continuous load derating requirements outlined in the reliability handbook.
Selection Notes
Select this component when a dual NPN configuration with a 20V collector-emitter rating and 300mA current capacity is required. Ensure the design accommodates the 200mW total power dissipation limit. Verify that the 30MHz transition frequency meets the signal processing speed requirements for the target switching or muting topology.
Part Context
This component belongs to the HN1C series of dual bipolar junction transistors manufactured by Toshiba Semiconductor and Storage. These devices utilize a silicon NPN epitaxial structure processed via the PCT method. The series is characterized by its integration of multiple transistors into small form-factor packages suitable for space-constrained electronic designs.
Replacement Considerations
Consult official Toshiba cross-reference documentation for verified equivalent part numbers. Do not substitute based solely on generic electrical parameters without confirming pinout compatibility and package dimensions.
