HN1C03FU-B,LF

Overview

The Toshiba HN1C03FU-B,LF is a dual NPN silicon epitaxial planar transistor housed in the US6 package. It features a collector-emitter voltage (VCEO) of 20 V and a collector-base voltage (VCBO) of 50 V. The device supports a maximum collector current of 300 mA with a power dissipation rating of 200 mW. Electrical characteristics include a minimum emitter-base voltage (VEBO) of 25 V and a typical reverse DC current gain (hFE) of 150 at VCE = -2 V and IC = -4 mA. The transition frequency (fT) is typically 30 MHz.

Feature Summary

• High emitter-base breakdown voltage rated at 25 V minimum
• Low on-resistance of approximately 1 Ω at IB = 5 mA
• High reverse DC current gain for efficient switching applications

Applications

• Muting circuits in audio equipment
• General-purpose switching applications
• Signal control logic stages

Procurement Notes

Verify the specific ordering suffix against official Toshiba Semiconductor documentation to confirm exact packaging and compliance status. Confirm that the component meets all required environmental standards for the intended deployment environment before finalizing procurement orders.

Selection Notes

Select this component when a dual NPN configuration with high emitter-base voltage tolerance is required. Ensure the design accounts for the 20 V collector-emitter limit and 200 mW total power dissipation constraint under expected operating temperatures.

Part Context

This part belongs to Toshiba's series of ultra super mini type transistors designed for compact circuit layouts. The US6 package provides a small footprint suitable for space-constrained consumer electronics and portable devices requiring reliable dual-transistor functionality.

Replacement Considerations

Consult official Toshiba cross-reference lists for verified substitutes. Do not assume functional equivalence with other dual NPN packages without verifying pinout compatibility and absolute maximum ratings.