HN2C01FEYTE85LF

$0.11

Description：TRANS 2NPN DUAL 50V 150MA ES6
Series：-

SKU:32dd2842061b Category: Bipolar Transistor Arrays Brand: Toshiba Semiconductor and Storage

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Product introduction

Product Detailed Parameters

Description：TRANS 2NPN DUAL 50V 150MA ES6
Series：-
Mfr：Toshiba Semiconductor and Storage
Package：Tape & Reel (TR),Cut Tape (CT)
Transistor Type：2 NPN (Dual)
Current - Collector (Ic) (Max)：150mA
Voltage - Collector Emitter Breakdown (Max)：50V
Vce Saturation (Max) @ Ib, Ic：250mV @ 10mA, 100mA
Current - Collector Cutoff (Max)：100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce：120 @ 2mA, 6V
Power - Max：100mW
Frequency - Transition：60MHz
Operating Temperature：150°C (TJ)
Mounting Type：Surface Mount
Package / Case：SOT-563, SOT-666
Supplier Device Package：ES6
Grade：-
Qualification：-

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HN2C01FEYTE85LF

Overview

The HN2C01FEYTE85LF is a dual NPN bipolar junction transistor (BJT) array manufactured by Toshiba Semiconductor and Storage. It features a maximum collector-emitter voltage of 50V and a continuous collector current rating of 150mA. The device operates with a transition frequency of 60MHz and supports a maximum power dissipation of 100mW. Designed for surface-mount applications, it utilizes the ES6 package, identified as SC-74 or SOT-457. The component is rated for a maximum junction temperature of 125°C and is currently in active production status.

Feature Summary

Dual NPN configuration within a single compact surface-mount package
High-speed switching capability supported by 60MHz transition frequency
Low saturation voltage characteristics for efficient signal processing

Applications

General-purpose switching circuits
Signal amplification stages
Logic interface buffers

Procurement Notes

Verify the exact ordering suffix to ensure compatibility with specific tape-and-reel specifications required for automated assembly processes. Confirm that the ES6 package dimensions align with the target PCB footprint design. Check RoHS compliance documentation to meet environmental regulations for the intended market. Ensure storage conditions adhere to moisture sensitivity levels defined in the datasheet prior to soldering.

Selection Notes

Select this component when a dual NPN topology is required in a minimal footprint. The 50V rating suits low-voltage logic systems. Consider the 100mW thermal limit for power constraints. Compare against single transistors if space allows, but prioritize this array for density. Verify the 60MHz speed meets circuit bandwidth requirements before finalizing the bill of materials.

Part Context

This part belongs to Toshiba's discrete semiconductor lineup, specifically the BJT array category. It complements other small-signal transistors like the HN1C01F series. The TE85L suffix indicates a specific packaging variant. It serves as a solution for compact electronic designs requiring multiple NPN switches without increasing board area significantly compared to individual components.