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Product Detailed Parameters
- Description：TRANS 2NPN DUAL 50V 150MA US6
- Series：-
- Mfr：Toshiba Semiconductor and Storage
- Package：Tape & Reel (TR),Cut Tape (CT)
- Transistor Type：2 NPN (Dual)
- Current - Collector (Ic) (Max)：150mA
- Voltage - Collector Emitter Breakdown (Max)：50V
- Vce Saturation (Max) @ Ib, Ic：250mV @ 10mA, 100mA
- Current - Collector Cutoff (Max)：100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce：200 @ 2mA, 6V
- Power - Max：200mW
- Frequency - Transition：80MHz
- Operating Temperature：125°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：6-TSSOP, SC-88, SOT-363
- Supplier Device Package：US6
- Grade：-
- Qualification：-
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Overview
The HN2C01FU-GR(T5L,F) is a dual NPN epitaxial planar transistor manufactured by Toshiba Semiconductor and Storage. It features a US6 (SOT-363) surface-mount package with a total collector power dissipation of 200 mW at 25°C ambient temperature. The device supports a maximum collector-emitter voltage of 50 V and a continuous collector current of 150 mA. Electrical characteristics include a DC current gain (hFE) ranging from 120 to 400, a transition frequency of 80 MHz, and a collector-emitter saturation voltage of 0.25 V maximum at specified test conditions.
Feature Summary
- Dual NPN configuration in a compact surface-mount package
- High breakdown voltage and moderate current handling capability
- Wide DC current gain range for flexible biasing applications
Applications
- Audio frequency general purpose amplifiers
- Small signal switching circuits
- General-purpose amplifier stages
Procurement Notes
Verify the specific ordering suffix against official Toshiba documentation to confirm packaging format and binning specifications. Ensure compliance with RoHS directives and environmental regulations applicable to your region before procurement. Confirm that the component meets the required reliability standards for the intended operating environment.
Selection Notes
Select this component when a dual NPN configuration is required in a small footprint. Consider the 50 V collector-emitter voltage and 150 mA current limits during circuit design. Evaluate the thermal derating requirements based on the 200 mW power dissipation rating and expected ambient temperatures.
Part Context
This part belongs to the HN2C01FU series of dual NPN transistors designed for audio and general-purpose applications. It utilizes an epitaxial planar process for improved performance and reliability compared to older technologies.
Replacement Considerations
Check for direct pin-compatible alternatives within the same manufacturer's portfolio or industry-standard equivalents. Verify electrical parameters such as hFE ranges, saturation voltages, and package dimensions before substitution.
FAQ
What is the maximum collector-emitter voltage for the HN2C01FU?
The maximum collector-emitter voltage (VCEO) is 50 V.
What is the typical DC current gain range?
The DC current gain (hFE) ranges from 120 to 400 depending on the specific binning classification.
What is the transition frequency of the device?
The transition frequency (fT) is 80 MHz under standard test conditions.
