HN2C01FU-Y(TE85L,F

Overview

The HN2C01FU is a dual NPN epitaxial planar silicon transistor manufactured by Toshiba Semiconductor and Storage. It features a US6 surface-mount package with a total collector power dissipation of 200 mW at 25°C ambient temperature. The device supports a maximum collector-emitter voltage (VCEO) of 50 V and a collector-base voltage (VCBO) of 60 V, with a continuous collector current rating of 150 mA. Electrical characteristics include a DC current gain (hFE) ranging from 120 to 400, a transition frequency (fT) of 80 MHz, and a collector-emitter saturation voltage of 0.25 V maximum at specified test conditions.

Feature Summary

• Dual configuration in a compact surface-mount package for space-constrained designs
• High breakdown voltage capability suitable for general-purpose amplifier applications
• Wide DC current gain range providing flexibility in biasing requirements

Applications

• Audio frequency general purpose amplifiers
• General-purpose switching circuits
• Low-power signal processing stages

Procurement Notes

Verify the specific hFE binning suffix required for your design, as the datasheet defines Y (120-240) and GR (200-400) classifications. Confirm that the TE85L,F ordering suffix aligns with your reel quantity and tape specifications before finalizing procurement orders.

Selection Notes

Select this component when a dual NPN configuration is needed within a small footprint. Ensure the thermal design accommodates the 200 mW total power dissipation limit on standard FR4 boards. Verify that the 50 V collector-emitter voltage meets the peak operating voltages of the target circuit application.

Part Context

This part belongs to Toshiba's lineup of small-signal dual transistors designed for audio and general-purpose amplification. It utilizes an epitaxial planar construction process to ensure stable performance across the specified temperature range while maintaining low leakage currents typical of modern silicon BJT arrays.

Replacement Considerations

Check for direct equivalents such as the HN1C01FU series or other dual NPN transistors in the US6 package. Verify pinout compatibility and ensure replacement parts meet the same VCEO, IC, and hFE specifications.