HN3C51F-GR(TE85L,F

Overview

The HN3C51F-GR(TE85L,F) is a dual NPN silicon epitaxial planar transistor manufactured by Toshiba Semiconductor and Storage. It features a high collector-emitter voltage of 120 V and a DC current gain (hFE) ranging from 200 to 700, with the GR suffix indicating a specific hFE bin of 200 to 400. The device has a maximum collector current of 100 mA and a total power dissipation of 300 mW. Key electrical parameters include a transition frequency of 100 MHz and a collector-emitter saturation voltage of 0.3 V at 10 mA. It utilizes a compact surface-mount package suitable for audio frequency general-purpose amplifier applications.

Feature Summary

• High breakdown voltage capability up to 120 V for robust operation in demanding circuits
• Wide DC current gain range from 200 to 700 ensuring consistent amplification performance
• Excellent hFE linearity maintaining stable gain across varying collector currents
• Low noise figure of 1.0 dB optimized for sensitive audio signal processing

Applications

• Audio frequency general-purpose amplifier circuits
• Small-signal amplification stages requiring high voltage tolerance
• Linear analog signal processing systems

Procurement Notes

Verify the ordering suffix TE85L,F against official Toshiba documentation to confirm packaging specifications and reel quantities. Ensure the GR hFE classification matches the required gain bin for the target application design. Cross-reference the manufacturer part number with distributor listings to validate authenticity and sourcing channels before finalizing procurement orders.

Selection Notes

Select this component when circuit designs require a dual NPN configuration with high voltage ratings exceeding standard small-signal transistors. The wide hFE range accommodates various biasing requirements without strict binning constraints beyond the specified GR limits. Consider the 300 mW total power dissipation limit and derating curves for thermal management in enclosed environments.

Part Context

This component belongs to the HN3C51 series of dual NPN transistors designed for general-purpose amplification. It shares the same core electrical characteristics as the HN3C51J but differs in packaging and specific hFE grading. The series is engineered for reliability in consumer electronics and industrial control applications where space efficiency and voltage handling are critical.

Replacement Considerations

Direct substitutes within the same family include the HN3C51J(TE85L,F). Verify pinout compatibility and hFE binning requirements when considering alternative manufacturers or higher-rated variants in the HN series.