HN4B102J(TE85L,F)

Overview

The HN4B102J(TE85L,F) is a dual bipolar junction transistor (BJT) containing one PNP and one NPN epitaxial planar silicon transistor in an SOT-25-5 package. The PNP section provides a collector-emitter voltage (VCEO) of -30 V, continuous DC collector current of -1.8 A, and a DC current gain (hFE) ranging from 200 to 500 at IC = -0.2 A. The NPN section offers a VCEO of 30 V, continuous DC collector current of 2.0 A, and an hFE range of 200 to 500 at IC = 0.2 A. Both transistors feature low saturation voltages and fast switching times, with fall times typically around 40 ns for the PNP and 45 ns for the NPN.

Feature Summary

• Integrated complementary PNP/NPN pair within a compact surface-mount package
• High DC current gain across standard operating currents
• Low collector-emitter saturation voltage for efficient power handling
• Fast switching characteristics suitable for high-speed applications

Applications

• MOS gate drive circuits
• General-purpose switching applications

Procurement Notes

Verify the complete part number including the ordering suffix TE85L,F when sourcing components. Confirm RoHS compliance status directly with the manufacturer or authorized distributors prior to procurement. Ensure that the specific datasheet version matches the production batch requirements for accurate electrical parameter validation.

Selection Notes

Select this component for designs requiring a matched PNP/NPN pair in a small footprint. Verify thermal management capabilities as the single-device DC power dissipation is rated at 0.75 W on an FR4 board. Consider the maximum pulse collector current ratings if designing for transient load conditions exceeding continuous DC limits.

Part Context

This device belongs to Toshiba's HN4B series of dual transistors utilizing the PCT process technology. It is designed specifically for applications demanding high density and small form factors. The complementary configuration allows for simplified circuit layouts in driver stages compared to using discrete individual transistors.

Replacement Considerations

Direct substitutes must match the SOT-25-5 package and provide equivalent PNP/NPN voltage and current ratings. Verify pinout compatibility and ensure the replacement device meets the required hFE ranges and switching speed specifications for the specific application.