HN4C06J-BL(TE85L,F

Overview

The HN4C06J-BL(TE85L,F) is a dual NPN bipolar junction transistor manufactured by Toshiba Semiconductor and Storage. It utilizes silicon technology and is housed in an SOT-25-5 surface-mount package. The device features a maximum collector-emitter voltage (VCEO) of 120 V and a maximum collector-base voltage (VCBO) of 120 V. The emitter-base voltage (VEBO) is rated at 5 V. Maximum DC collector current is specified at 100 mA, with a power dissipation capability of 300 mW. The gain-bandwidth product (fT) is 100 MHz, and the DC current gain (hFE) ranges from a minimum of 200 to a maximum of 700. The component supports a maximum operating temperature of +150°C.

Feature Summary

• Dual NPN configuration within a compact SOT-25-5 package for space-efficient circuit design
• High voltage tolerance with 120 V collector-emitter and collector-base ratings
• Wide DC current gain range supporting diverse amplification requirements

Applications

• General-purpose switching circuits requiring high voltage isolation
• Amplifier stages utilizing dual transistor configurations
• Low-power signal processing applications

Procurement Notes

Verify the exact part number against official Toshiba Semiconductor and Storage documentation, as suffix variations may indicate specific binning or packaging differences. Confirm RoHS compliance status through the manufacturer's datasheet before integration into regulated assemblies. Ensure sourcing channels provide authentic components to avoid counterfeit risks associated with small-signal transistors.

Selection Notes

Select this component when a dual NPN topology is required with high voltage handling capabilities up to 120 V. The 100 mA current rating and 300 mW power dissipation make it suitable for low-to-medium power applications. Compare the hFE range and fT specifications against circuit requirements to ensure adequate gain and bandwidth performance for the intended frequency response.

Part Context

This component belongs to the HN4 series of dual bipolar transistors offered by Toshiba Semiconductor and Storage. The series provides integrated dual transistor solutions in compact surface-mount packages, facilitating simplified PCB layout for balanced differential pairs or push-pull configurations. The TE85L suffix typically denotes reel packaging for automated assembly processes.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided source material. Engineers should consult Toshiba's official cross-reference guides or equivalent manufacturers for compatible dual NPN transistors with matching voltage, current, and package specifications.