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HSM835GE3/TR13 is listed in the Single Diodes range at ChipApex. The manufacturer field lists Microchip Technology. Its product description is DIODE SCHOTTKY 35V 8A DO215AB. Review the specifications below when checking this part for your BOM.
The HSM835GE3/TR13 is a Schottky barrier rectifier manufactured by Microchip Technology. It features an 8 A average forward rectified current rating and a 35 V maximum repetitive reverse voltage. The device utilizes a DO-214AB (SMC) surface-mount package. Key electrical parameters include a maximum DC reverse leakage current of 250 µA at 35 V and a typical forward voltage drop of 620 mV at 8 A. It operates within a junction temperature range of -55°C to +175°C.
Verify the specific suffix 'E3' indicates lead-free compliance when sourcing. Confirm the 'TR13' designation corresponds to the required reel quantity for your manufacturing line. Ensure the component matches the DO-214AB footprint dimensions during PCB layout finalization.
Select this component for applications requiring low forward voltage drop and fast recovery characteristics. The 8 A current rating supports moderate power levels, while the 35 V breakdown voltage suits low-voltage systems. Verify that the thermal management design accommodates the specified junction temperature limits under full load conditions.
This part belongs to the HSM835 series of Schottky rectifiers from Microchip Technology. The series offers various current and voltage ratings packaged in the SMC form factor. The HSM835 variant specifically targets high-current, low-voltage rectification needs in compact electronic designs.
Substitutes must match the 8 A current, 35 V voltage, and DO-214AB package. Verify equivalent forward voltage and leakage specifications to ensure circuit performance remains within acceptable tolerances.
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