RF Diode HSMP-3833-TR1G product image

HSMP-3833-TR1G

  • Description:RF DIODE PIN 200V 250MW SOT-23-3
  • Series:-

SKU:e43d27777849 Category: Brand:

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HSMP-3833-TR1G is listed in the RF Diode range at ChipApex. The manufacturer field lists Broadcom Limited. Its product description is RF DIODE PIN 200V 250MW SOT-23-3. Review the specifications below when checking this part for your BOM.

RF Diode specifications for HSMP-3833-TR1G

  • Description:RF DIODE PIN 200V 250MW SOT-23-3
  • Series:-
  • Mfr:Broadcom Limited
  • Package:Tape & Reel (TR)
  • Diode Type:PIN - 1 Pair Common Anode
  • Voltage - Peak Reverse (Max):200V
  • Current - Max:1:00 AM
  • Capacitance @ Vr, F:0.3pF @ 50V, 1MHz
  • Resistance @ If, F:1.5Ohm @ 100mA, 100MHz
  • Power Dissipation (Max):250 mW
  • Operating Temperature:150°C (TJ)
  • Package / Case:TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package:SOT-23-3

RF Diode datasheet and documents for HSMP-3833-TR1G

HSMP-3833-TR1G

RF Diode Overview

The HSMP-3833-TR1G is a general-purpose surface mount RF PIN diode manufactured by Broadcom Limited. It features a common anode configuration housed in an SOT-23 package. The device has a breakdown voltage of 200 V, a maximum series resistance of 1.5 Ω, and a total capacitance of 0.3 pF. Typical parameters include a carrier lifetime of 500 ns and a reverse recovery time of 80 ns. It supports a forward current of 1 A (1 ms pulse) and operates within a junction temperature range of -65°C to 150°C.

RF Diode Feature Summary

  • Optimized for low capacitance switching applications
  • Designed for low current attenuator circuits
  • Low failure in time (FIT) rate

RF Diode Applications

  • General purpose RF switches requiring low capacitance
  • Attenuators where current consumption is critical
  • SPDT switch configurations using positive or dual bias currents
  • High isolation SPST switch implementations

RF Diode Procurement Notes

Verify the specific ordering suffix to confirm packaging orientation and quantity. The -TR1G suffix indicates a 3000-piece tape and reel format conforming to RS-481 standards. Ensure compatibility with automated placement equipment regarding device orientation and cavity dimensions during procurement planning.

RF Diode Selection Notes

Select this component when a common anode PIN diode configuration is required for RF signal routing. The 200 V breakdown voltage provides high isolation capabilities compared to lower voltage variants. Verify that the 0.3 pF total capacitance meets the specific insertion loss requirements of the target frequency band.

RF Diode Part Context

This part belongs to the HSMP-383x series of general-purpose PIN diodes designed for surface mount assembly. Unlike the HSMP-386x series which offers guaranteed performance specifications, the 383x series provides typical electrical characteristics suitable for standard design applications. The series includes single, series, common anode, and common cathode configurations.

RF Diode Replacement Considerations

HSMP-3830-TR1G: Single diode variant with identical package but different internal configuration.

RF Diode FAQ

What is the internal configuration of the HSMP-3833?

The HSMP-3833 features a common anode configuration.

Does the HSMP-383x series have a SPICE model?

No, a SPICE model is not available because SPICE does not account for the key PIN diode characteristic of carrier lifetime.

What is the typical carrier lifetime for the HSMP-383x series?

The typical carrier lifetime is 500 ns at a junction temperature of 25°C.

HSMP-3833-TR1GHSMP-3833-TR1G

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