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HSMS-280B-TR1G is listed in the RF Diode range at ChipApex. The manufacturer field lists Broadcom Limited. Its product description is RF DIODE SCHOTTKY 70V SOT-323. Review the specifications below when checking this part for your BOM.
The HSMS-280B-TR1G is a surface mount RF Schottky barrier diode manufactured by Broadcom Limited. It features a single diode configuration housed in an SOT-23 package with lead code A0. The device is optimized for high voltage applications, offering a minimum breakdown voltage of 70 V and a maximum forward voltage of 410 mV at a forward current of 1 mA. Electrical specifications include a maximum reverse leakage current of 200 nA at 50 V and a typical dynamic resistance of 35 ohms at 5 mA. The component supports a junction temperature up to 150°C and operates within a storage temperature range of -65°C to 150°C.
Verify the specific ordering suffix TR1G corresponds to the required tape and reel quantity of 3000 units per 7-inch reel. Confirm that the SOT-23 package marking code A0 matches the design requirements. Ensure compliance with RoHS standards and lead-free assembly processes during procurement.
Select this component when high breakdown voltage is critical for the circuit design. The HSMS-280x series exhibits higher series resistance compared to other families; therefore, it is best suited for applications where voltage handling outweighs the need for minimal resistive loss. Verify thermal management capabilities given the 500°C/W thermal resistance rating.
This part belongs to the HSMS-280x family of surface mount RF Schottky barrier diodes. The series provides various configurations including single, dual, and quad versions to offer designer flexibility. All devices in this family utilize the same diode chip technology, ensuring consistent electrical characteristics across different package options.
Direct substitutes within the HSMS-280x family include HSMS-2800-TR1G (Single), HSMS-2802-TR1G (Series), and HSMS-2804-TR1G (Common Cathode). These parts share identical packaging and pinout configurations but differ in internal diode arrangement.
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