HSMS-280K-TR1G

RF Diode Overview

The HSMS-280K-TR1G is a surface mount RF Schottky barrier diode from the Broadcom HSMS-280x series, optimized for high voltage applications. It features a High Isolation Unconnected Pair configuration within an SOT-363 package. Key electrical specifications include a minimum breakdown voltage of 70 V and a maximum forward voltage of 410 mV at 1 mA. The device exhibits a maximum reverse leakage current of 200 nA at 50 V and a maximum capacitance of 2.0 pF at 0 V bias. It supports a junction temperature up to 150°C and operates within a storage temperature range of -65°C to +150°C.

RF Diode Feature Summary

• High isolation unconnected pair configuration for independent signal handling
• Optimized for high voltage applications with elevated breakdown ratings
• Low failure in time (FIT) rate ensuring reliability
• Six-sigma quality level manufacturing process

RF Diode Applications

• Analog circuit design requiring high voltage tolerance
• Digital switching applications
• RF mixing and detection circuits
• Signal sampling and clamping functions

RF Diode Procurement Notes

Verify component authenticity through authorized distributors or direct manufacturer channels. Confirm RoHS compliance status and check for end-of-life notices or production change notifications prior to procurement. Ensure packaging integrity matches specified reel requirements for automated assembly processes.

RF Diode Selection Notes

Select this component when high breakdown voltage is required alongside low capacitance characteristics. The HSMS-280x family offers higher series resistance compared to lower voltage variants; ensure the application can accommodate the resulting voltage drop. Verify that the SOT-363 footprint aligns with the PCB layout constraints.

RF Diode Part Context

This part belongs to the HSMS-280x family of surface mount RF Schottky diodes manufactured by Broadcom Limited. The series provides various configurations including single, dual, and quad versions. The HSMS-280x line is specifically distinguished by its high breakdown voltage capabilities, making it suitable for demanding power and RF environments.

RF Diode Replacement Considerations

Direct substitutes within the same family include HSMS-280M-TR1G (Common Cathode Quad) or HSMS-280B-TR1G (Single). Cross-family replacements like HSMS-282x offer lower series resistance but reduced breakdown voltage. Verify pinout compatibility and thermal resistance differences before substitution.