HSMS-2813-TR2G

RF Diode Overview

The HSMS-2813-TR2G is a surface mount RF Schottky barrier diode from the Broadcom HSMS-281x series, housed in an SOT-363 (SC-70) package with six leads. It features a common anode configuration and is designed for low flicker noise applications. Key electrical specifications include a maximum breakdown voltage of 20 V, a typical forward voltage of 400 mV at 1 mA, and a reverse leakage current of 35 nA at 200 V. The device exhibits a typical capacitance of 1.2 pF and dynamic resistance of 15 Ω at 5 mA. It operates within a junction temperature range of -65°C to 150°C.

RF Diode Feature Summary

• Optimized for very low flicker (1/f) noise performance suitable for sensitive analog and digital circuits.
• Manufactured using Agilent techniques ensuring high matching precision between paired or quad devices on the same wafer.
• Available in multiple package configurations including single, dual, and quad versions with tape and reel options.

RF Diode Applications

• Mixing
• Detecting
• Switching
• Sampling
• Clamping

RF Diode Procurement Notes

Verify the specific ordering suffix to confirm the packaging quantity and lead-free status. The TR2 suffix indicates a 10,000-unit reel, while G denotes lead-free compliance. Ensure the component matches the required SOT-363 footprint and pinout configuration before integration into the design.

RF Diode Selection Notes

Select this component when low flicker noise is critical, as it offers superior performance compared to the HSMS-282x family. Use the HSMS-2813 variant specifically for common anode circuit topologies. Consider the HSMS-282x family if lower series resistance is prioritized over noise characteristics.

RF Diode Part Context

This part belongs to the HSMS-281x series of surface mount RF Schottky barrier diodes. The series provides designers with flexibility through various package configurations and electrical specifications tailored for different RF and microwave applications requiring low noise operation.

RF Diode Replacement Considerations

HSMS-2813-BLKG

RF Diode FAQ

What is the effective carrier lifetime for the HSMS-281x series?

The effective carrier lifetime is 100 ps maximum, measured with the Krakauer method at 5 mA.

How is the diagonal capacitance calculated in quad configurations?

It is calculated using the formula: C_DIAGONAL = (C1 x C2 / (C1 + C2)) + (C3 x C4 / (C3 + C4)).

What is the maximum recommended reflow temperature during assembly?

The maximum temperature in the reflow zone should not exceed 235°C.