RF Diode HSMS-8101-TR1G product image

HSMS-8101-TR1G

  • Description:RF DIODE SCHOTTKY 4V 75MW SOT23
  • Series:-

SKU:51ffe61be775 Category: Brand:

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HSMS-8101-TR1G is listed in the RF Diode range at ChipApex. The manufacturer field lists Broadcom Limited. Its product description is RF DIODE SCHOTTKY 4V 75MW SOT23. Review the specifications below when checking this part for your BOM.

RF Diode specifications for HSMS-8101-TR1G

  • Description:RF DIODE SCHOTTKY 4V 75MW SOT23
  • Series:-
  • Mfr:Broadcom Limited
  • Package:Tape & Reel (TR)
  • Diode Type:Schottky - Single
  • Voltage - Peak Reverse (Max):4V
  • Current - Max:-
  • Capacitance @ Vr, F:0.26pF @ 0V, 1MHz
  • Resistance @ If, F:14Ohm @ 5mA, 1MHz
  • Power Dissipation (Max):75 mW
  • Operating Temperature:150°C (TJ)
  • Package / Case:TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package:SOT-23-3

RF Diode datasheet and documents for HSMS-8101-TR1G

HSMS-8101-TR1G

RF Diode Overview

The HSMS-8101-TR1G is a surface mount microwave Schottky mixer diode manufactured by Broadcom Limited. It is housed in a plastic SOT-23 package and optimized for operation at 10–14 GHz. Key electrical specifications include a breakdown voltage of 4 V, total capacitance of 0.26 pF, dynamic resistance of 14 Ω, and forward voltage ranging from 250 mV to 350 mV. The device exhibits a typical conversion loss of 6.3 dB at 12 GHz with an IF impedance of 150 Ω. Absolute maximum ratings specify a total device dissipation of 75 mW, peak inverse voltage of 4 V, and junction temperature limits between -65°C and +150°C.

RF Diode Feature Summary

  • Optimized for X/Ku-band applications
  • Low capacitance design
  • Low conversion loss performance
  • Lead-free plastic packaging

RF Diode Applications

  • DBS downconverter applications
  • VSAT downconverter applications
  • Microwave mixer circuits

RF Diode Procurement Notes

Verify the component authenticity through official manufacturer channels or authorized distributors. Confirm that the ordering suffix matches the required tape and reel quantity. Ensure compliance with RoHS directives and check for any specific handling precautions related to electrostatic sensitive devices during procurement and storage.

RF Diode Selection Notes

Select this component when low conversion loss and low capacitance are critical for X/Ku-band mixer designs. Consider the SOT-23 package size for space-constrained PCB layouts. Evaluate thermal management requirements against the 75 mW total device dissipation limit. Compare dynamic resistance and forward voltage specifications against circuit requirements for optimal matching.

RF Diode Part Context

This part belongs to the HSMS-8101 series of surface mount microwave Schottky mixer diodes. It shares similar characteristics with other models in the family such as HSMS-8202, HSMS-8207, and HSMS-8209. These components are designed for high-frequency applications requiring low noise and efficient mixing performance in compact surface mount packages.

RF Diode Replacement Considerations

Direct replacements within the same series include HSMS-8202, HSMS-8207, and HSMS-8209. Verify pinout compatibility and electrical parameter alignment before substitution. Ensure the replacement component meets the same package and environmental specifications.

HSMS-8101-TR1GHSMS-8101-TR1G

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