HUF75332S3S

Single FETs, MOSFETs Overview

The HUF75332S3S is an N-channel power MOSFET manufactured by Harris Corporation using the UltraFET process. It features a 55V drain-source voltage rating and a continuous drain current of 52A at case temperature. The device dissipates up to 110W of power under specified thermal conditions. It utilizes a TO-263AB (D2PAK) surface-mount package with two leads and a tab for efficient heat transfer.

Single FETs, MOSFETs Feature Summary

• Utilizes UltraFET process technology for enhanced performance
• Designed for high-efficiency switching applications
• Surface-mount construction for automated assembly

Single FETs, MOSFETs Applications

• DC-DC converter circuits
• Power management modules
• Motor control systems

Single FETs, MOSFETs Procurement Notes

Verify the manufacturer designation, as Harris Semiconductor assets were acquired by Fairchild Semiconductor. Confirm the specific suffix 'S3S' matches the required lead-free and RoHS compliance status. Ensure the package type corresponds to TO-263AB D2PAK specifications before finalizing procurement orders.

Single FETs, MOSFETs Selection Notes

Select this component when a 55V N-channel MOSFET with moderate current handling is required. The TO-263 package offers a balance between thermal performance and board space. Consider the UltraFET process benefits for efficiency requirements in low-voltage power conversion designs.

Single FETs, MOSFETs Part Context

This part belongs to the HUF7533x series of N-channel power MOSFETs. The series includes variants such as HUF75332G3 and HUF75332P3, which share similar electrical characteristics but differ in packaging configurations. The S3S variant specifically denotes the TO-263 surface-mount option.

Single FETs, MOSFETs Replacement Considerations

Check for equivalents from Fairchild Semiconductor or ON Semiconductor, as they inherited the product line. Verify pinout compatibility and thermal resistance values when substituting.