HUFA75307D3ST

$0.27

Description：MOSFET N-CH 55V 15A TO252AA
Series：UltraFET™
Mfr：onsemi
Package：Tape & Reel (TR)

SKU:e8f87f5acb43 Category: Single FETs, MOSFETs Brand: onsemi

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Product introduction

HUFA75307D3ST is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists onsemi. Its product description is MOSFET N-CH 55V 15A TO252AA. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for HUFA75307D3ST

Description：MOSFET N-CH 55V 15A TO252AA
Series：UltraFET™
Mfr：onsemi
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：55 V
Current - Continuous Drain (Id) @ 25°C：15A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：90mOhm @ 15A, 10V
Vgs(th) (Max) @ Id：4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：20 nC @ 20 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：250 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：45W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：TO-252AA
Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63

Single FETs, MOSFETs datasheet and documents for HUFA75307D3ST

HUFA75307D3ST

Single FETs, MOSFETs Overview

The HUFA75307D3ST is an N-Channel UltraFET Power MOSFET manufactured by onsemi, formerly Fairchild Semiconductor. It features a TO-252AA (TO-252) surface-mount package with the 'ST' suffix indicating tape and reel packaging. Key electrical specifications include a drain-to-source voltage (V_DSS) of 55 V, a continuous drain current (I_D) of 15 A at 25°C case temperature, and a maximum drain-to-source on-resistance (R_DS(on)) of 90 mΩ at V_GS = 10 V. The device supports a junction temperature range from -55°C to +175°C and offers a power dissipation capability of 45 W.

Single FETs, MOSFETs Feature Summary

Utilizes the UltraFET process technology to achieve low on-resistance per silicon area for high power efficiency.
Capable of withstanding high energy in avalanche mode, supporting unclamped inductive switching applications.
Integrated body diode exhibits very low reverse recovery time and stored charge characteristics.

Single FETs, MOSFETs Applications

Switching regulators
Motor drivers
Relay drivers
Low-voltage bus switches

Single FETs, MOSFETs Procurement Notes

Verify that the specific part number HUFA75307D3ST corresponds to the TO-252AA package variant supplied in tape and reel format. Confirm compliance with automotive industry requirements if applicable, referencing AEC Q101 standards. Ensure sourcing channels provide valid documentation regarding the transition from Fairchild Semiconductor to onsemi manufacturing history.

Single FETs, MOSFETs Selection Notes

Select this component for designs requiring robust performance in switching converters and portable battery-operated products where power efficiency is critical. The device is suitable for environments demanding high thermal stability and reliable operation under pulsed current conditions. Consider the thermal resistance characteristics when designing heat dissipation strategies for the TO-252AA package.

Single FETs, MOSFETs Part Context

This device belongs to the UltraFET family of N-Channel power MOSFETs. It was originally developed as the TA75307 developmental type before being released as the HUFA75307 series. The product line includes variants such as the HUFA75307P3 (TO-220AB) and HUFA75307D3 (TO-251AA), offering different packaging options while maintaining consistent electrical performance parameters.