HVC355B7KRF-E

Overview

The HVC355B7KRF-E is a variable capacitance diode manufactured by Renesas Electronics Corporation. It is constructed using silicon and operates with a minimum breakdown voltage of 15V. The device features a single configuration and is housed in an R-PDSO-F2 package, which is a small outline form factor suitable for surface mount applications. It has two terminals and exhibits a minimum diode capacitance ratio of 2.8.

Feature Summary

• Utilizes silicon as the primary diode element material
• Designed for surface mount installation
• Features a rectangular plastic/epoxy package body

Applications

• Tunable RF circuits
• Voltage-controlled oscillators
• Frequency synthesizers

Procurement Notes

Verify component authenticity through authorized distributors or direct manufacturer channels. Confirm package integrity and terminal condition upon receipt. Ensure storage conditions comply with moisture sensitivity level requirements to prevent degradation prior to assembly. Cross-reference datasheet specifications against application requirements to validate performance suitability.

Selection Notes

Select this component based on its 15V breakdown voltage rating and silicon construction. Consider the R-PDSO-F2 package dimensions for PCB layout constraints. Evaluate the minimum capacitance ratio of 2.8 against tuning range requirements. Ensure operating temperatures align with standard commercial ranges.

Part Context

This part belongs to the HVC355B series of variable capacitance diodes from Renesas. These components are designed for high-frequency applications requiring precise capacitance control via reverse bias voltage. The series offers reliability in consumer electronics and communication systems where compact surface-mount solutions are preferred.

Replacement Considerations

• HVC350BKRF