IAUC60N04S6N050HATMA1

$1.17

Description：MOSFET 2N-CH 40V 60A 8TDSON
Series：OptiMOS™

SKU:b694e2608e4a Category: FET, MOSFET Arrays Brand: Infineon Technologies

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Product introduction

IAUC60N04S6N050HATMA1 is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET 2N-CH 40V 60A 8TDSON. Review the specifications below when checking this part for your BOM.

FET, MOSFET Arrays specifications for IAUC60N04S6N050HATMA1

Description：MOSFET 2N-CH 40V 60A 8TDSON
Series：OptiMOS™
Mfr：Infineon Technologies
Package：Tape & Reel (TR),Cut Tape (CT)
Technology：MOSFET (Metal Oxide)
Configuration：2 N-Channel (Half Bridge)
FET Feature：-
Drain to Source Voltage (Vdss)：40V
Current - Continuous Drain (Id) @ 25°C：60A (Tj)
Rds On (Max) @ Id, Vgs：5mOhm @ 30A, 10V
Vgs(th) (Max) @ Id：3V @ 13µA
Gate Charge (Qg) (Max) @ Vgs：17nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds：1027pF @ 25V
Power - Max：52W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Mounting Type：Surface Mount
Package / Case：8-PowerVDFN
Supplier Device Package：PG-TDSON-8-57
Grade：Automotive
Qualification：AEC-Q101

FET, MOSFET Arrays datasheet and documents for IAUC60N04S6N050HATMA1

IAUC60N04S6N050HATMA1

FET, MOSFET Arrays Overview

The IAUC60N04S6N050H is an OptiMOS™-6 automotive power MOSFET featuring a PG-TDSON-8 package. It provides a maximum drain-source voltage of 40 V and a continuous drain current of 60 A at 25 °C. The device exhibits a maximum on-state resistance of 5.0 mΩ at VGS=10V. Key dynamic parameters include a typical gate charge of 13 nC and a total gate charge of up to 17 nC. It operates within a temperature range of -55 °C to +175 °C and meets MSL1 standards for reflow soldering.

FET, MOSFET Arrays Feature Summary

OptiMOS™-6 technology optimized for automotive applications
AEC-Q101 qualified with 100% avalanche testing
Enhancement mode N-channel half-bridge configuration
Robust thermal performance supporting 175 °C operation

FET, MOSFET Arrays Applications

Automotive power switching circuits
Half-bridge driver stages
Low-voltage DC-DC converter topologies

FET, MOSFET Arrays Procurement Notes

Verify the specific ordering suffix against Infineon's official documentation to confirm packaging details, such as tape-and-reel specifications or marking codes. Confirm that the component version matches the required datasheet revision for your design implementation. Ensure all electrical ratings align with your system's operational limits before finalizing procurement orders.

FET, MOSFET Arrays Selection Notes

Select this component when designing low-voltage automotive systems requiring high efficiency and robust reliability. The OptiMOS™-6 technology offers a balance of low conduction losses and fast switching speeds suitable for compact PCB layouts. Consider the thermal resistance characteristics and package limitations when determining heat dissipation requirements for your specific application environment.

FET, MOSFET Arrays Part Context

This part belongs to Infineon's OptiMOS™-6 family, designed specifically for demanding automotive environments. It utilizes advanced trench gate technology to minimize on-resistance while maintaining high breakdown voltage capabilities. The PG-TDSON-8 package facilitates efficient thermal management and space-saving integration into modern vehicle electronic control units.

FET, MOSFET Arrays Replacement Considerations

Consult official cross-reference lists for verified substitutes. Ensure any replacement maintains identical pinout configurations, voltage ratings, and thermal characteristics to guarantee compatibility with existing board designs without requiring layout modifications.