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IAUZ30N08S5N186ATMA1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET_(75V 120V( PG-TSDSON-8. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for IAUZ30N08S5N186ATMA1
- Description：MOSFET_(75V 120V( PG-TSDSON-8
- Series：OptiMOS™
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：80 V
- Current - Continuous Drain (Id) @ 25°C：30A (Tj)
- Drive Voltage (Max Rds On, Min Rds On)：6V, 10V
- Rds On (Max) @ Id, Vgs：18.6mOhm @ 15A, 10V
- Vgs(th) (Max) @ Id：3.8V @ 13µA
- Gate Charge (Qg) (Max) @ Vgs：12.1 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：759 pF @ 40 V
- FET Feature：-
- Power Dissipation (Max)：41W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：PG-TSDSON-8-32
- Package / Case：8-PowerTDFN
Single FETs, MOSFETs datasheet and documents for IAUZ30N08S5N186ATMA1
Single FETs, MOSFETs Overview
The IAUZ30N08S5N186ATMA1 is an N-channel enhancement-mode OptiMOS™-5 power MOSFET designed for automotive applications. It features a PG-TSDSON-8-32 surface-mount package and operates with a drain-source voltage of 80 V. The device supports a continuous drain current of 30 A at 25 °C, with a maximum on-state resistance of 18.6 mΩ at VGS=10 V. It withstands pulsed currents up to 120 A and single-pulse avalanche energy of 35 mJ. Operating temperatures range from -55 °C to +175 °C, and the component meets MSL1 reflow requirements.
Single FETs, MOSFETs Feature Summary
- OptiMOS™-5 technology optimized for automotive-grade reliability
- High thermal stability supporting operation up to 175 °C junction temperature
- Robust avalanche performance verified through 100% testing
- Lead-free construction compliant with RoHS standards
Single FETs, MOSFETs Applications
- Automotive power switching circuits
- Motor control systems
- DC-DC converter stages
Single FETs, MOSFETs Procurement Notes
Verify the complete part number including the ATMA1 suffix against official Infineon documentation to ensure correct packaging and tape-and-reel specifications. Confirm that the PG-TSDSON-8-32 footprint matches your PCB design constraints. Cross-reference the datasheet revision history to validate parameter consistency before finalizing procurement orders.
Single FETs, MOSFETs Selection Notes
Select this component when designing automotive electronics requiring high current handling in a compact surface-mount form factor. The low gate charge facilitates efficient driver integration. Ensure the application environment remains within the specified -55 °C to +175 °C operating range to maintain optimal performance and longevity.
Single FETs, MOSFETs Part Context
This transistor belongs to the OptiMOS™-5 family, representing advanced silicon technology for power management. It is manufactured by Infineon Technologies AG and is specifically engineered to meet the rigorous demands of automotive environments. The device integrates standard enhancement-mode functionality with specialized thermal and electrical characteristics suitable for modern vehicle architectures.
Single FETs, MOSFETs Replacement Considerations
Consult official Infineon substitution guides for compatible alternatives. Verify pinout compatibility and thermal resistance values when considering cross-brand replacements.
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