Single Diodes IDC51D120T6MX1SA3 product image

IDC51D120T6MX1SA3

  • Description:DIODE STANDARD 1.2KV 100A SAWN
  • Series:-
  • Mfr:Infineon Technologies
  • Package:Bulk

SKU:94f3c9def824 Category: Brand:

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IDC51D120T6MX1SA3 is listed in the Single Diodes range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is DIODE STANDARD 1.2KV 100A SAWN. Review the specifications below when checking this part for your BOM.

Single Diodes specifications for IDC51D120T6MX1SA3

  • Description:DIODE STANDARD 1.2KV 100A SAWN
  • Series:-
  • Mfr:Infineon Technologies
  • Package:Bulk
  • Technology:Standard
  • Voltage - DC Reverse (Vr) (Max):1200 V
  • Current - Average Rectified (Io):100A
  • Voltage - Forward (Vf) (Max) @ If:2.05 V @ 100 A
  • Speed:Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr):-
  • Current - Reverse Leakage @ Vr:18 µA @ 1200 V
  • Capacitance @ Vr, F:-
  • Mounting Type:Surface Mount
  • Package / Case:Die
  • Supplier Device Package:Sawn on foil
  • Operating Temperature - Junction:-40°C ~ 175°C
  • Grade:-
  • Qualification:-

Single Diodes datasheet and documents for IDC51D120T6MX1SA3

IDC51D120T6MX1SA3

Single Diodes Overview

IDC51D120T6M is a silicon power diode chip utilizing EMCON 4 technology, designed for low to medium power modules. It features a 1200 V repetitive peak reverse voltage and supports a continuous forward current of up to 100 A. The device operates within a junction temperature range of -40 °C to +175 °C. Key electrical characteristics include a maximum forward voltage drop of 2.05 V at 100 A and 25 °C, with a typical value of 1.35 V. Reverse leakage current is specified at 18 µA under rated voltage conditions.

Single Diodes Feature Summary

  • EMCON 4 technology enabling soft and fast switching performance
  • Low reverse recovery charge for improved efficiency
  • Small temperature coefficient for stable operation

Single Diodes Applications

  • Low power drives
  • Medium power drives
  • Low to medium power modules

Single Diodes Procurement Notes

Verify the specific ordering suffix XSA1 against official Infineon documentation to confirm package type and tape-and-reel specifications. Confirm that the component meets all required thermal management standards for your assembly process. Ensure storage conditions adhere to the recommended environment of dry nitrogen below 23°C to maintain device integrity prior to die bonding.

Single Diodes Selection Notes

Select this chip for applications requiring high blocking voltage and robust thermal performance in compact module designs. The 1200 V rating suits industrial and automotive power conversion systems. Consider the 110 µm thickness and sawn-on-foil format for compatibility with standard die-bonding processes using epoxy or soft solder.

Single Diodes Part Context

This component belongs to the IDC series of silicon power diodes from Infineon Technologies. It is a bare die intended for integration into custom power modules rather than standalone through-hole or surface-mount packages. The device leverages advanced epitaxial growth techniques to achieve high reliability in demanding power electronics environments.

Single Diodes Replacement Considerations

No direct public substitute part numbers are documented in the provided source material. Engineers should evaluate alternative chips based on matching voltage ratings, current capabilities, and physical dimensions such as the 7.00 x 7.30 mm die size.

IDC51D120T6MX1SA3IDC51D120T6MX1SA3

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