IDD09SG60CXTMA2

Single Diodes Overview

IDD09SG60CXTMA2 is a third-generation thinQ! SiC Schottky diode with a 600 V repetitive peak reverse voltage. It operates within a junction temperature range of -55 °C to 175 °C and utilizes a PG-TO252-3 package. The component supports a continuous forward current of 9 A at a case temperature below 130 °C, with a maximum surge current of 49 A. Key electrical parameters include a typical forward voltage of 1.8 V at 9 A and 25 °C, a total capacitive charge of 15 nC, and a thermal resistance from junction to case of 1.3 K/W.

Single Diodes Feature Summary

• Utilizes Silicon Carbide semiconductor material for high-performance switching
• Exhibits zero reverse recovery and no forward recovery characteristics
• Features temperature-independent switching behavior across the operating range
• Provides high surge current capability and optimized operation at elevated temperatures

Single Diodes Applications

• Switched-mode power supplies (SMPS)
• Continuous conduction mode power factor correction (CCM PFC)
• Motor drive systems
• Solar energy applications
• Uninterruptible power supply (UPS) units

Single Diodes Procurement Notes

Verify that the XTMA2 suffix corresponds to the specific tape-and-reel packaging configuration required for automated assembly processes. Confirm that the component meets RoHS compliance standards and JEDEC qualification requirements for the intended target application environment before finalizing procurement specifications.

Single Diodes Selection Notes

Select this component for designs requiring fast switching speeds and minimal switching losses due to the absence of minority carrier injection. Evaluate the thermal management strategy carefully, as the device dissipates significant power at full load. Ensure the circuit design accommodates the specified dv/dt ruggedness limits during high-speed transitions.

Single Diodes Part Context

This part belongs to Infineon's third-generation thinQ! family of silicon carbide Schottky diodes. These components are engineered to replace traditional silicon rectifiers in high-frequency and high-temperature environments. The technology focuses on reducing the figure of merit QC/IF to enhance overall system efficiency.

Single Diodes Replacement Considerations

Direct replacement requires verifying pinout compatibility with the PG-TO252-3 footprint. Ensure the substitute component matches or exceeds the 600 V blocking voltage and 9 A continuous current ratings. Thermal resistance characteristics must be compatible with the existing heatsink design.