Single Diodes IDH20G65C5XKSA2 product image

IDH20G65C5XKSA2

$6.60
  • Description:DIODE SIL CARB 650V 20A PGTO2201
  • Series:CoolSiC™+
  • Mfr:Infineon Technologies
  • Package:Tube

SKU:92d2efa7fb00 Category: Brand:

  
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IDH20G65C5XKSA2 is listed in the Single Diodes range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is DIODE SIL CARB 650V 20A PGTO2201. Review the specifications below when checking this part for your BOM.

Single Diodes specifications for IDH20G65C5XKSA2

  • Description:DIODE SIL CARB 650V 20A PGTO2201
  • Series:CoolSiC™+
  • Mfr:Infineon Technologies
  • Package:Tube
  • Technology:SiC (Silicon Carbide) Schottky
  • Voltage - DC Reverse (Vr) (Max):650 V
  • Current - Average Rectified (Io):20A
  • Voltage - Forward (Vf) (Max) @ If:1.7 V @ 20 A
  • Speed:No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr):0 ns
  • Current - Reverse Leakage @ Vr:210 µA @ 650 V
  • Capacitance @ Vr, F:590pF @ 1V, 1MHz
  • Mounting Type:Through Hole
  • Package / Case:TO-220-2
  • Supplier Device Package:PG-TO220-2-1
  • Operating Temperature - Junction:-55°C ~ 175°C
  • Grade:-
  • Qualification:-

Single Diodes datasheet and documents for IDH20G65C5XKSA2

IDH20G65C5XKSA2

Single Diodes Overview

The IDH20G65C5XKSA2 is a 650V Silicon Carbide Schottky diode from Infineon's 5th Generation thinQ! family. It features a PG-TO220-2 package with continuous forward current of 20A at TC < 135°C and surge current up to 142A. Key electrical parameters include a typical forward voltage of 1.5V, reverse current of 1.1µA, and total capacitive charge of 29nC. The device operates within a temperature range of -55°C to 175°C.

Single Diodes Feature Summary

  • Utilizes proprietary diffusion soldering process combined with thin-wafer technology for improved thermal characteristics.
  • Exhibits benchmark switching behavior with no reverse recovery or forward recovery effects.
  • Demonstrates temperature-independent switching behavior across the operating range.
  • Provides high surge current capability and optimized performance for high-temperature operation.

Single Diodes Applications

  • Switch mode power supply
  • Power factor correction
  • Solar inverter
  • Uninterruptible power supply

Single Diodes Procurement Notes

Verify component authenticity through official Infineon channels or authorized distributors. Confirm datasheet revision 2.2 alignment during integration. Ensure proper mounting torque of 70 Ncm using M3 screws. Validate thermal management design against RthJC specifications. Check RoHS compliance status prior to assembly.

Single Diodes Selection Notes

Select this component for designs requiring high-frequency operation and reduced cooling requirements compared to silicon diodes. Consider the low figure of merit (Qc x Vf) for efficiency optimization. Evaluate thermal resistance limits when designing heat sinks. Assess system reliability benefits derived from lower operating temperatures and reduced EMI generation.

Single Diodes Part Context

This part belongs to the 5th Generation thinQ! SiC Schottky Diode family designed to complement 650V CoolMOS™ families. It represents Infineon's leading-edge technology for SiC applications, offering improved efficiency over all load conditions. The product line targets stringent application requirements in the 650V voltage range.

Single Diodes Replacement Considerations

IDH20G65C5 is the base model variant without specific ordering suffixes listed as direct substitutes in the provided documentation.

Single Diodes FAQ

What is the maximum repetitive peak reverse voltage?

The maximum repetitive peak reverse voltage (VRRM) is 650 V at Tj = 25°C.

Does the diode exhibit reverse recovery charge?

No, the device features no reverse recovery or forward recovery effects due to its Schottky barrier construction.

What is the thermal resistance from junction to case?

The typical thermal resistance RthJC is 0.6 K/W, with a maximum value of 1.0 K/W.

IDH20G65C5XKSA2IDH20G65C5XKSA2
$6.60
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