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IDH20G65C5XKSA2 is listed in the Single Diodes range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is DIODE SIL CARB 650V 20A PGTO2201. Review the specifications below when checking this part for your BOM.
The IDH20G65C5XKSA2 is a 650V Silicon Carbide Schottky diode from Infineon's 5th Generation thinQ! family. It features a PG-TO220-2 package with continuous forward current of 20A at TC < 135°C and surge current up to 142A. Key electrical parameters include a typical forward voltage of 1.5V, reverse current of 1.1µA, and total capacitive charge of 29nC. The device operates within a temperature range of -55°C to 175°C.
Verify component authenticity through official Infineon channels or authorized distributors. Confirm datasheet revision 2.2 alignment during integration. Ensure proper mounting torque of 70 Ncm using M3 screws. Validate thermal management design against RthJC specifications. Check RoHS compliance status prior to assembly.
Select this component for designs requiring high-frequency operation and reduced cooling requirements compared to silicon diodes. Consider the low figure of merit (Qc x Vf) for efficiency optimization. Evaluate thermal resistance limits when designing heat sinks. Assess system reliability benefits derived from lower operating temperatures and reduced EMI generation.
This part belongs to the 5th Generation thinQ! SiC Schottky Diode family designed to complement 650V CoolMOS™ families. It represents Infineon's leading-edge technology for SiC applications, offering improved efficiency over all load conditions. The product line targets stringent application requirements in the 650V voltage range.
IDH20G65C5 is the base model variant without specific ordering suffixes listed as direct substitutes in the provided documentation.
The maximum repetitive peak reverse voltage (VRRM) is 650 V at Tj = 25°C.
No, the device features no reverse recovery or forward recovery effects due to its Schottky barrier construction.
The typical thermal resistance RthJC is 0.6 K/W, with a maximum value of 1.0 K/W.
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