IDT71P74804S200BQ

Memory IC Overview

The IDT71P74804S200BQG is an 18Mb QDR II SRAM with a 1M x 18 organization. It features independent, double-data-rate read and write data ports for simultaneous access. The device operates at clock frequencies up to 200 MHz with an access time of 8.4 ns. It utilizes a 165-ball CABGA package (13x15 mm) and supports HSTL inputs scalable from 1.4V to 1.9V. Core voltage is 1.8V, while I/O supply ranges from 1.4V to 1.9V.

Memory IC Feature Summary

• Independent read and write data ports enable concurrent transactions without bidirectional bus requirements.
• Quad-data-rate performance achieved through four-word bursts on all accesses using dual echo clocks.
• Scalable output impedance allows drive strength adjustment to match system transmission line loads.

Memory IC Applications

• High-speed networking equipment requiring parallel memory interfaces
• Telecommunications systems utilizing synchronous memory architectures
• Industrial control applications demanding high throughput data processing

Memory IC Procurement Notes

Verify the specific suffix 'BQG' against manufacturer documentation to confirm package type and environmental compliance status. Confirm that the 200 MHz speed grade matches the required system timing constraints. Check current product lifecycle status as this component family may be subject to discontinuation notices.

Memory IC Selection Notes

Select this part when a 1M x 18 configuration is required alongside independent read/write ports. Ensure the design accommodates the 165-ball BGA footprint and provides separate VDD and VDDQ power rails. Verify that the host controller can manage the multiplexed address bus and byte write control signals effectively.

Memory IC Part Context

This component belongs to the IDT71P74 series of QDR II SRAMs developed by Integrated Device Technology, now part of Renesas Electronics. The series includes variants like the IDT71P74604 with different bit widths but similar architectural features.

Memory IC Replacement Considerations

Consult official substitution guides for equivalent QDR II devices within the IDT/Renesas portfolio. Verify pin compatibility and electrical specifications before replacing with other speed grades or density variants in the same family.

Memory IC FAQ

How does the QDRII handle simultaneous read and write requests?

Read and write operations are interleaved, occurring on alternate clock cycles. If both are requested simultaneously, the read operation takes priority and the write request is ignored.

What is the function of the ZQ pin?

The ZQ pin is used for output impedance matching. An external resistor connected between ZQ and ground sets the drive strength, which is adjusted every 1024 clock cycles to compensate for voltage and temperature drifts.