IDT71V25761YSA200BG

Memory IC Overview

The IDT71V25761YSA200BG is a synchronous single data rate (SDR) static random-access memory (SRAM) integrated circuit manufactured by Renesas Electronics Corporation. It provides a total storage capacity of 4.5 megabits, organized as 128K words by 36 bits. The device supports parallel interface operations with a maximum clock frequency of 200 MHz and features an access time of 5 nanoseconds. It operates within a supply voltage range of 3.135V to 3.465V and is housed in a 119-pin plastic ball grid array (PBGA) package measuring 14x22 mm. The component is rated for commercial operating temperatures between 0°C and 70°C.

Memory IC Feature Summary

• Synchronous SDR architecture enabling high-speed data transfer via a parallel interface
• Integrated 36-bit wide data organization suitable for processor cache applications
• Surface-mount PBGA packaging designed for automated assembly processes

Memory IC Applications

• Processor secondary cache memory systems
• High-performance embedded computing platforms
• Industrial equipment requiring fast real-time data buffering

Memory IC Procurement Notes

Verify the exact suffix designation against official Renesas documentation, as variations such as BG8 or BQI indicate specific package types and temperature grades. Confirm RoHS compliance status, as historical records for this family often indicate non-compliance. Check current lifecycle status, as many variants in this series are marked as obsolete or end-of-life. Ensure the selected revision matches the required moisture sensitivity level and lead-free specifications for your manufacturing process.

Memory IC Selection Notes

Select this component when a 36-bit wide synchronous SRAM interface is required for system integration. Compare access times and clock frequencies against alternative memory solutions to ensure timing compatibility with the host processor bus. Evaluate the physical dimensions of the 119-PBGA package against available board space constraints. Consider thermal management requirements based on the specified commercial temperature range and power consumption characteristics during active operation.

Memory IC Part Context

This part belongs to the IDT 71V25761S family of synchronous SRAMs, originally developed by Integrated Device Technology before its acquisition by Renesas Electronics. The family is characterized by high-density storage and fast access speeds, targeting performance-critical applications. Variants within the series differ primarily in package type, pin count, and operating temperature ranges, allowing designers to choose the form factor best suited for their specific hardware layout and environmental conditions.

Memory IC Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided source material. Verify compatibility with existing designs by cross-referencing pinouts and electrical specifications with potential alternatives from the same manufacturer or other vendors offering similar synchronous SRAM architectures.