IDT71V3556S133PF

Memory IC Overview

The IDT71V3556S133PF is a 4.5 Mbit synchronous ZBT SRAM with a 128K x 36 organization, operating at 133 MHz with 4.2 ns access time. It uses a 100-pin TQFP package and requires 3.135V to 3.465V power supplies.

Memory IC Feature Summary

• Zero Bus Turnaround technology eliminates dead cycles between read and write operations.
• Fully pipelined architecture with positive clock-edge triggered registers for address, data, and control signals.
• On-chip burst counter supports four-word linear or interleaved burst sequences.
• Individual byte write capability allows selective writing to specific bytes within the word.

Memory IC Applications

• High-performance networking equipment requiring low-latency memory buffering
• Telecommunications systems utilizing synchronous data processing
• Industrial control applications needing fast random access memory

Memory IC Procurement Notes

Verify the component status as discontinued by checking official Renesas documentation. Confirm that the 100-TQFP package matches your PCB footprint requirements. Ensure voltage supply levels align with the specified 3.3V ±5% range for both core and I/O.

Memory IC Selection Notes

Select this part for designs requiring 36-bit data width and synchronous interface compatibility. The ZBT feature is critical for systems minimizing bus turnaround latency. Verify temperature range suitability for commercial environments if industrial ratings are not required.

Memory IC Part Context

This device belongs to the IDT71V3556/58 family of high-speed synchronous SRAMs. It shares architectural similarities with other ZBT devices but differs in memory organization and pinout configurations across various package options like BGA and fBGA.

Memory IC Replacement Considerations

Consult official manufacturer notices for direct substitutes. Cross-reference pinouts and electrical specifications carefully when evaluating alternative components from different manufacturers.