Memory IC IDT71V3556S166BQ product image

IDT71V3556S166BQ

  • Description:IC SRAM 4.5MBIT PAR 165CABGA
  • Series:-
  • Mfr:Renesas Electronics Corporation
  • Package:Tray

SKU:92e4a7c1f075 Category: Brand:

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IDT71V3556S166BQ is listed in the Memory IC range at ChipApex. The manufacturer field lists Renesas Electronics Corporation. Its product description is IC SRAM 4.5MBIT PAR 165CABGA. Review the specifications below when checking this part for your BOM.

Memory IC specifications for IDT71V3556S166BQ

  • Description:IC SRAM 4.5MBIT PAR 165CABGA
  • Series:-
  • Mfr:Renesas Electronics Corporation
  • Package:Tray
  • Memory Type:Volatile
  • Memory Format:SRAM
  • Technology:SRAM - Synchronous, SDR (ZBT)
  • Memory Size:4.5Mbit
  • Memory Organization:128K x 36
  • Memory Interface:Parallel
  • Clock Frequency:166 MHz
  • Write Cycle Time - Word, Page:-
  • Voltage - Supply:3.135V ~ 3.465V
  • Operating Temperature:0°C ~ 70°C (TA)
  • Mounting Type:Surface Mount
  • Package / Case:165-TBGA
  • Supplier Device Package:165-CABGA (13x15)
  • Access Time:3.5 ns

Memory IC datasheet and documents for IDT71V3556S166BQ

IDT71V3556S166BQ

Memory IC Overview

The IDT71V3556S166BQ is a 4.5 Mbit synchronous static random access memory organized as 128K x 36. It utilizes Zero Bus Turnaround technology to eliminate dead cycles between read and write operations. The device features pipelined outputs, an on-chip burst counter supporting four-word bursts, and individual byte write control. It operates with a 3.3V core supply and 3.3V I/O voltage.

Memory IC Feature Summary

  • Zero Bus Turnaround architecture eliminates bus turnaround dead cycles
  • Pipelined output structure for high-speed system performance
  • On-chip burst counter supports linear or interleaved sequences
  • Individual byte write capability via dedicated control pins

Memory IC Applications

  • High-performance embedded systems requiring fast data buffering
  • Network infrastructure equipment utilizing ZBT SRAMs
  • Industrial control applications needing synchronous memory interfaces

Memory IC Procurement Notes

Verify the specific suffix 'BQ' against official Renesas documentation to confirm package type and temperature grade. Confirm RoHS compliance status and moisture sensitivity level prior to integration. Ensure design compatibility with the 166 MHz clock frequency and 3.3V power requirements specified in the datasheet.

Memory IC Selection Notes

Select this component when zero bus turnaround latency is critical for system throughput. The 128K x 36 organization suits wide-data-path applications. Verify that the 166 MHz speed grade meets timing constraints. Consider the 165 fBGA package availability if space-constrained designs are required.

Memory IC Part Context

This part belongs to the IDT71V3556/58 family of 3.3V synchronous ZBT SRAMs. The family includes variants with different organizations (128K x 36 and 256K x 18) and speed grades. The 'S' designation indicates commercial temperature range operation, while 'SA' denotes industrial range with optional JTAG support.

Memory IC Replacement Considerations

IDT71V3556SA166BQGI8 serves as a verified substitute within the same family, offering industrial temperature range and JTAG interface capabilities.

IDT71V3556S166BQIDT71V3556S166BQ

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