IDT71V3557S80PF8

Memory IC Overview

The IDT71V3557S80PF8 is a synchronous Single Data Rate Zero Bus Transition (ZBT) Static Random Access Memory integrated circuit manufactured by Renesas Electronics Corporation. It provides a total storage capacity of 4.5 Megabits, organized as 128K words by 36 bits. The device features a parallel interface with an access time of 8 nanoseconds and operates on a supply voltage ranging from 3.135 volts to 3.465 volts. It is housed in a 100-pin Thin Quad Flat Package (TQFP) with dimensions of 14x14 millimeters.

Memory IC Feature Summary

• Supports high-speed synchronous data transfer using Zero Bus Transition technology to reduce power consumption and signal noise.
• Includes a burst counter for sequential address generation and flow-through output modes for continuous data streaming.
• Features self-timed write cycles controlled by global write enable and individual byte write enables.

Memory IC Applications

• High-performance embedded systems requiring fast memory access
• Network infrastructure equipment such as routers and switches
• Industrial automation control units

Memory IC Procurement Notes

Verify the specific suffix configuration against official Renesas documentation to ensure compatibility with required packaging and environmental standards. Confirm that the component meets all necessary regulatory compliance requirements for the intended deployment environment before finalizing procurement decisions.

Memory IC Selection Notes

Select this component when a 36-bit wide memory interface is required alongside synchronous operation capabilities. Ensure the design accommodates the 100-pin TQFP footprint and validates power supply stability within the specified 3.3-volt tolerance range for reliable performance.

Memory IC Part Context

This part belongs to the IDT 71V3557 family of synchronous ZBT SRAMs. These devices are designed to bridge the speed gap between processors and memory, offering faster access than asynchronous alternatives while consuming less power than traditional synchronous DRAMs in burst mode applications.

Memory IC Replacement Considerations

Publicly confirmed substitute part numbers include IS61NLF12836A-7.5TQLI from Integrated Silicon Solution Inc. Verify pinout and electrical specifications match before substitution.