IDT71V3557SA75BGG

Memory IC Overview

The IDT71V3557SA75BGG is a 4.5Mb synchronous static random-access memory (SRAM) organized as 128K x 36 bits. It operates with a 3.3V core supply and supports 3.3V I/O levels. The device features a parallel interface with a typical access time of 7.5 ns, enabling clock frequencies up to 117 MHz. It is housed in a 119-pin plastic ball grid array (PBGA) package measuring 14x22 mm. The component supports flowthrough output architecture and includes boundary scan capabilities compliant with IEEE 1149.1 standards.

Memory IC Feature Summary

• Supports high-performance synchronous burst operations with selectable interleaved or linear modes via the LBO input.
• Integrates self-timed write cycles controlled by global write control (GW), byte write enable (BWE), and individual byte writes (BWx).
• Includes power-down functionality managed by the ZZ input to reduce active power consumption during idle states.

Memory IC Applications

• High-speed data buffering in telecommunications infrastructure equipment.
• Cache memory implementation in network switching systems.
• Data storage within industrial automation controllers requiring fast access times.

Memory IC Procurement Notes

Verify the specific suffix 'BGG' against official Renesas documentation to confirm the 119-PBGA package configuration. Confirm current manufacturing status, as this part number may be discontinued or subject to product change notices. Ensure compatibility with 3.3V logic levels and check for any updated moisture sensitivity level requirements before procurement.

Memory IC Selection Notes

Select this component when a 36-bit wide data path is required for system integration. The 7.5 ns access speed suits applications needing throughput near 117 MHz. Consider the 119-pin BGA footprint for board space constraints. Verify that the synchronous flowthrough architecture aligns with the target system's timing requirements compared to pipelined alternatives.

Memory IC Part Context

This SRAM belongs to the IDT 71V3557 family of 3.3V synchronous memories. It shares architectural similarities with other devices in the series but differs in package type and specific electrical characteristics defined by its suffix. The family is designed for embedded systems requiring reliable, high-speed volatile memory solutions with standard parallel interfaces.

Memory IC Replacement Considerations

Consult official Renesas documentation for verified substitute part numbers. Cross-reference pinouts and electrical specifications carefully if considering alternative packages within the same family, such as those with different suffixes indicating distinct physical dimensions or thermal properties.