IDT71V3558SA100BG

Memory IC Overview

The IDT71V3558SA100BG is a 4.5Mb synchronous SRAM with a 256K x 18 organization, manufactured by Renesas Electronics Corporation. It operates at a clock frequency of 100 MHz with a 5 ns access time. The device uses a parallel interface and requires a supply voltage between 3.135V and 3.465V. It is housed in a 119-PBGA package measuring 14x22 mm and supports an operating temperature range of 0°C to 70°C.

Memory IC Feature Summary

• Zero Bus Turnaround (ZBT) technology eliminates dead cycles during bus turnaround between read and write operations.
• Positive clock-edge triggered address, data, and control signal registers enable fully pipelined applications.
• On-chip burst counter supports four-word bursts in either linear or interleaved sequences.

Memory IC Applications

• High-performance system speed implementations
• Pipelined memory architectures
• Systems requiring rapid read/write cycle transitions

Memory IC Procurement Notes

Verify the specific suffix 'BG' corresponds to the 119-ball grid array package and commercial temperature range. Confirm RoHS compliance status as historical records indicate variations within this family. Ensure the source document matches the exact part number for accurate pinout and timing verification.

Memory IC Selection Notes

Select this component when a 256K x 18 configuration is required for synchronous memory applications. The ZBT feature is critical for systems needing minimal latency between read and write commands. Verify that the 119-BGA footprint fits the target PCB design constraints.

Memory IC Part Context

This device belongs to the IDT71V3556/58 family of 3.3V Synchronous ZBT SRAMs. The 'SA' suffix indicates the inclusion of an optional Boundary Scan JTAG interface compliant with IEEE 1149.1 standards. The '100' designation specifies the 100 MHz operational speed grade.

Memory IC Replacement Considerations

Public confirmed substitute: None identified in provided documentation.