IDT71V3559SA80BQG

Memory IC Overview

The IDT71V3559SA80BQG is a synchronous Single Data Rate Zero Bus Turnaround (ZBT) Static Random Access Memory integrated circuit manufactured by Renesas Electronics Corporation. It features a memory organization of 256K x 18 bits, providing a total storage capacity of 4.5 Megabits. The device supports parallel interface operations with an access time of 8 nanoseconds. It operates within a supply voltage range of 3.135V to 3.465V and is designed for industrial temperature environments ranging from -40°C to +85°C. The component is housed in a 165-pin Chip Array Ball Grid Array (CABGA) package measuring 13mm by 15mm.

Memory IC Feature Summary

• Synchronous ZBT architecture enabling high-speed data transfer with reduced bus turnaround latency
• Self-timed write cycle mechanism utilizing Global Write control and Byte Write Enable signals
• Configurable burst mode operation selectable via the LBO input for interleaved or linear sequences
• Integrated power-down functionality controlled by the ZZ input pin for standby power management

Memory IC Applications

• High-performance networking equipment requiring fast packet buffering
• Industrial automation systems needing reliable volatile memory storage
• Telecommunications infrastructure supporting synchronous data processing
• Embedded computing platforms utilizing 3.3V logic interfaces

Memory IC Procurement Notes

Verify the specific suffix BQG against official Renesas documentation to confirm the exact package type and moisture sensitivity level. Confirm RoHS compliance status as some variants may not meet current environmental standards. Check for active production status or obsolescence notices before procurement planning. Ensure the supplier provides valid traceability documents for the 165-CABGA package. Validate that the operating voltage requirements match the target system design specifications.

Memory IC Selection Notes

Select this component when a 4.5Mb synchronous SRAM with 18-bit width is required for systems operating at 8ns access speeds. It is suitable for designs needing 3.3V core voltage and 3.3V I/O compatibility. Consider the 165-pin CABGA package constraints for PCB layout and thermal management. Evaluate the need for ZBT features versus standard synchronous SRAM based on bus efficiency requirements. Ensure the industrial temperature range meets the operational environment demands.

Memory IC Part Context

This part belongs to the IDT 71V3559 family of synchronous ZBT SRAMs. The family offers various access times and package options to suit different performance and form factor needs. These devices are engineered for applications demanding high bandwidth and low latency. The technology represents a transition point between traditional asynchronous and advanced pipelined memories.

Memory IC Replacement Considerations

Consult official Renesas substitution guides for verified alternatives. Cross-reference pinouts and electrical characteristics carefully. Verify package compatibility if replacing with similar density parts.