IDT71V3576YS133PFG

Memory IC Overview

The IDT71V3576YS133PFG is a synchronous SDR SRAM IC manufactured by Renesas Electronics Corporation. It features a memory organization of 128K x 36, providing a total capacity of 4.5Mb. The device supports a clock frequency of 133 MHz with an access time of 4.2 ns. It operates on a parallel interface and requires a supply voltage between 3.135V and 3.465V. The component is housed in a 100-TQFP (14x14) surface-mount package and functions within a temperature range of 0°C to 70°C.

Memory IC Feature Summary

• Supports high-speed system performance through pipelined output architecture.

Memory IC Applications

• High-performance computing systems requiring fast data access.

Memory IC Procurement Notes

Verify the specific suffix 'YS' against official Renesas documentation to confirm exact manufacturing attributes, as ordering suffixes may indicate variations in packaging or compliance status. Ensure compatibility with existing board designs regarding the 100-TQFP footprint and 3.3V I/O requirements before procurement.

Memory IC Selection Notes

Select this component for applications requiring a 128K x 36 configuration with synchronous parallel interface capabilities. Consider the 4.2 ns access time and 133 MHz operating speed relative to system timing constraints. Verify that the 100-TQFP package dimensions fit the target PCB layout and that the commercial temperature range meets operational environmental needs.

Memory IC Part Context

This part belongs to the IDT71V3576/78 family of high-speed SRAMs designed for demanding digital signal processing and networking applications. The series offers various density and speed options, with the YS variant specifically tailored for 133 MHz operation. It utilizes CMOS technology to provide efficient power consumption while maintaining high throughput for burst data transfers.

Memory IC Replacement Considerations

Public confirmed substitute part numbers are not available in the provided source material.