IDT71V3577S85PF8

Memory IC Overview

The IDT71V3577S85PF8 is a high-speed synchronous static random access memory (SRAM) manufactured by Renesas Electronics Corporation. It features a memory organization of 128K x 36 bits, providing a total capacity of 4.5 Mbit. The device operates with a maximum clock frequency of 87 MHz and supports an access time of 8.5 ns. It utilizes a parallel interface and requires a core supply voltage range of 3.135 V to 3.465 V. The component is housed in a 100-pin thin quad flatpack (TQFP) package.

Memory IC Feature Summary

• Flow-through architecture with no registers in the data output path for direct data availability.
• Internal burst address counter supporting four cycles of data per single address presentation.
• Self-timed write cycle capability utilizing global write control and byte write enables.
• Configurable linear or interleaved burst modes via the LBO input pin.

Memory IC Applications

• Cache controller systems requiring fast data retrieval.
• Processor-based architectures needing high-speed memory buffering.
• Embedded systems utilizing synchronous burst operations.

Memory IC Procurement Notes

Verify the specific suffix PF8 against official Renesas documentation to confirm package type and temperature grade. Confirm RoHS compliance status as historical records vary. Check current lifecycle status as this series may be discontinued or subject to last-time buy notices. Ensure compatibility with existing board layouts for the 100-pin TQFP footprint.

Memory IC Selection Notes

Select this component when a 128K x 36 organization is required for synchronous applications. The 8.5 ns speed grade suits designs operating up to 87 MHz. Consider the flow-through output characteristic if low latency is critical compared to registered outputs. Verify that the 3.3V I/O levels match the system bus requirements.

Memory IC Part Context

This part belongs to the IDT71V3577/79 family of 3.3V synchronous SRAMs. The 'S' suffix typically denotes commercial temperature range operation. The family includes variants with different densities and speeds, such as the 7.5 ns and 8.0 ns grades. These devices are designed for high-performance embedded memory applications.

Memory IC Replacement Considerations

Official substitutes include other members of the IDT71V3577 family with compatible speed grades and packages. Cross-vendor replacements require verification of pinout compatibility and electrical characteristics. Consult Renesas PCN documents for end-of-life notifications and approved alternative part numbers.

Memory IC FAQ

What is the difference between the S and SA suffixes?

The 'SA' suffix indicates the inclusion of an optional Boundary Scan JTAG interface compliant with IEEE 1149.1, which is not present in the standard 'S' version.

How does the LBO pin affect burst mode?

The LBO pin selects the burst sequence order. A LOW state on LBO selects the linear burst sequence, while a HIGH state selects the interleaved burst sequence.