IDT71V3577SA75BQGI

Memory IC Overview

The IDT71V3577SA75BQGI is a high-speed synchronous SRAM organized as 128K x 36, providing a total memory capacity of 4.5 Mbit. It features a flow-through architecture with no registers in the data output path. The device supports fast access times of 7.5 ns and operates at clock frequencies up to 117 MHz. It utilizes a 3.3V core power supply and 3.3V I/O levels. The component is housed in a 119-ball grid array (BGA) package.

Memory IC Feature Summary

• Flow-through architecture for immediate data availability without output registration
• Internal burst address counter supporting interleaved or linear burst sequences via LBO input
• Self-timed write cycles controlled by global write enable (GW), byte write enable (BWE), and individual byte writes (BWx)
• Optional IEEE 1149.1 compliant Boundary Scan JTAG interface for test mode control

Memory IC Applications

• High-performance cache memory systems
• Network routing and switching equipment
• Telecommunications infrastructure
• Industrial control systems requiring fast data access

Memory IC Procurement Notes

Verify the specific suffix 'SA' indicates the inclusion of the optional JTAG interface and '75' denotes the 7.5 ns speed grade. Confirm the 'BQGI' suffix corresponds to the correct 119-pin BGA package variant and temperature range specifications. Ensure compatibility with existing board layouts regarding pin assignments and power requirements before procurement.

Memory IC Selection Notes

Select this component when a synchronous SRAM with a flow-through output architecture is required for low-latency applications. The 128K x 36 organization suits wide data bus interfaces. Consider the optional JTAG feature if boundary scan testing is necessary for production validation. Ensure the system supports 3.3V logic levels and provides adequate power delivery for the specified current consumption.

Memory IC Part Context

This part belongs to the IDT71V3577/79 family of 3.3V Synchronous SRAMs. The family includes variants with different densities, such as the 256K x 18 configuration found in the IDT71V3579. These devices are designed for high-speed parallel memory applications where predictable timing and burst capabilities are critical for system performance.

Memory IC Replacement Considerations

Direct replacements include other parts from the IDT71V3577 family with matching speed grades and package types. Verify that any substitute maintains the same 119-pin BGA footprint and 3.3V operating voltage. Check for equivalent JTAG support if the SA suffix functionality is required.