Memory IC IDT71V3578S133PF product image

IDT71V3578S133PF

  • Description:IC SRAM 4.5MBIT PARALLEL 100TQFP
  • Series:-
  • Mfr:Renesas Electronics Corporation
  • Package:Tray

SKU:336f5926669e Category: Brand:

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IDT71V3578S133PF is listed in the Memory IC range at ChipApex. The manufacturer field lists Renesas Electronics Corporation. Its product description is IC SRAM 4.5MBIT PARALLEL 100TQFP. Review the specifications below when checking this part for your BOM.

Memory IC specifications for IDT71V3578S133PF

  • Description:IC SRAM 4.5MBIT PARALLEL 100TQFP
  • Series:-
  • Mfr:Renesas Electronics Corporation
  • Package:Tray
  • Memory Type:Volatile
  • Memory Format:SRAM
  • Technology:SRAM - Synchronous, SDR
  • Memory Size:4.5Mbit
  • Memory Organization:256K x 18
  • Memory Interface:Parallel
  • Clock Frequency:133 MHz
  • Write Cycle Time - Word, Page:-
  • Voltage - Supply:3.135V ~ 3.465V
  • Operating Temperature:0°C ~ 70°C (TA)
  • Mounting Type:Surface Mount
  • Package / Case:100-LQFP
  • Supplier Device Package:100-TQFP (14x14)
  • Access Time:4.2 ns

Memory IC datasheet and documents for IDT71V3578S133PF

IDT71V3578S133PF

Memory IC Overview

The IDT71V3578S133PF is a high-speed synchronous static random access memory (SRAM) manufactured by Renesas Electronics Corporation. It features a 256K x 18 memory organization, providing a total capacity of 4.5 Mbit. The device operates with a 3.3V core and I/O power supply. It supports a maximum clock frequency of 133 MHz with a clock access time of 4.2 ns. The component utilizes a parallel interface and is packaged in a 100-pin plastic thin quad flatpack (TQFP).

Memory IC Feature Summary

  • Supports pipelined burst operations with an internal burst address counter for sequential data access.
  • Features self-timed write cycles controlled by global write enable and individual byte write enables.
  • Includes asynchronous sleep mode functionality to minimize power consumption during idle states.
  • Offers selectable linear or interleaved burst sequences via the LBO input pin.

Memory IC Applications

  • High-performance cache memory systems
  • Network routing equipment buffers
  • Telecommunications base station processing units

Memory IC Procurement Notes

Verify the specific suffix 'S' confirms the absence of JTAG boundary scan capabilities compared to the 'SA' variant. Confirm the package type matches the required 100-pin TQFP footprint. Ensure voltage levels align with the specified 3.3V requirements for both core and I/O supplies.

Memory IC Selection Notes

Select this component when a 256K x 18 configuration is required for synchronous applications. Consider the 4.2 ns access speed for system timing constraints. Evaluate the need for byte-level write granularity if partial updates are necessary within the design architecture.

Memory IC Part Context

This part belongs to the IDT71V3576/78 family of 3.3V synchronous SRAMs. The IDT71V3578 specifically denotes the 256K x 18 density variant, whereas the IDT71V3576 provides a 128K x 36 organization. Both share identical pinouts and operational characteristics.

Memory IC Replacement Considerations

IDT71V3578S166PFG

Memory IC FAQ

Does the IDT71V3578S133PF include JTAG boundary scan support?

No, the 'S' suffix indicates that the JTAG interface is not available. The 'SA' suffix version includes the optional IEEE 1149.1 compliant JTAG interface.

How is the burst sequence order determined?

The burst sequence order is determined by the state of the LBO (Linear/Interleaved Burst Order) input pin. A low state selects the linear sequence, while a high state selects the interleaved sequence.

IDT71V3578S133PFIDT71V3578S133PF

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