Memory IC IDT71V416L12Y product image

IDT71V416L12Y

  • Description:IC SRAM 4MBIT PARALLEL 44SOJ
  • Series:-
  • Mfr:Renesas Electronics Corporation
  • Package:Tube

SKU:27198d34a3cf Category: Brand:

ChipApex WhatsApp

Consult the customer manager about the wholesale price.

consultation hotline:86-132-6715-2157

email:[email protected]
Contact the product manager for consultation. One-stop consultation is available.


Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Submitting!
Submission successful!
Submission failed!
Email error!
Phone number error!

IDT71V416L12Y is listed in the Memory IC range at ChipApex. The manufacturer field lists Renesas Electronics Corporation. Its product description is IC SRAM 4MBIT PARALLEL 44SOJ. Review the specifications below when checking this part for your BOM.

Memory IC specifications for IDT71V416L12Y

  • Description:IC SRAM 4MBIT PARALLEL 44SOJ
  • Series:-
  • Mfr:Renesas Electronics Corporation
  • Package:Tube
  • Memory Type:Volatile
  • Memory Format:SRAM
  • Technology:SRAM - Asynchronous
  • Memory Size:4Mbit
  • Memory Organization:256K x 16
  • Memory Interface:Parallel
  • Clock Frequency:-
  • Write Cycle Time - Word, Page:12ns
  • Voltage - Supply:3V ~ 3.6V
  • Operating Temperature:0°C ~ 70°C (TA)
  • Mounting Type:Surface Mount
  • Package / Case:44-BSOJ (0.400", 10.16mm Width)
  • Supplier Device Package:44-SOJ
  • Access Time:12 ns
  • Grade:-
  • Qualification:-

Memory IC datasheet and documents for IDT71V416L12Y

IDT71V416L12Y

Memory IC Overview

The IDT71V416L12Y is a 4 Megabit (256K x 16) high-speed CMOS Static RAM. It operates on a single 3.3V supply with access times of 12ns. The device features LVTTL-compatible bidirectional I/O, JEDEC pinout for noise reduction, and separate byte enables. It is available in commercial and industrial temperature ranges.

Memory IC Feature Summary

  • JEDEC Center Power / GND pinout for reduced noise
  • Bidirectional data inputs and outputs directly LVTTL-compatible
  • Upper and Lower Byte Enable Pins for partial word writes
  • Low power consumption via chip deselect

Memory IC Applications

  • High-speed memory systems requiring low latency
  • Embedded systems utilizing 3.3V logic levels
  • Industrial applications requiring extended temperature stability

Memory IC Procurement Notes

Verify the specific suffix 'Y' corresponds to the 48-ball grid array package configuration as defined in the official ordering information. Confirm that the 'L' designation indicates the Low Power variant, which may have distinct current specifications compared to the Standard Power version. Ensure the component meets the required environmental operating range for the target application.

Memory IC Selection Notes

Select this component when a 12ns asynchronous SRAM interface is required within a 3.3V system architecture. The Low Power variant is suitable for applications where standby current reduction is prioritized over dynamic operating current. Verify compatibility with LVTTL signal levels and ensure the 48-ball BGA footprint fits the board layout constraints.

Memory IC Part Context

This part belongs to the IDT71V416 family of 4 Megabit static random-access memories. The series includes variants with different speed grades (10ns, 12ns, 15ns) and power profiles (Standard vs. Low). The manufacturer utilizes advanced CMOS technology to provide cost-effective solutions for high-speed memory needs in commercial and industrial environments.

Memory IC Replacement Considerations

IDT71V416S12Y

Memory IC FAQ

What does the 'L' suffix indicate in the model number?

The 'L' suffix designates the Low Power variant of the device, which offers reduced power consumption characteristics compared to the Standard Power version.

Is the device compatible with standard TTL logic levels?

No, the bidirectional inputs and outputs are directly LVTTL-compatible, not standard TTL.

IDT71V416L12YIDT71V416L12Y

Click on the inquiry