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IDT71V416L12Y is listed in the Memory IC range at ChipApex. The manufacturer field lists Renesas Electronics Corporation. Its product description is IC SRAM 4MBIT PARALLEL 44SOJ. Review the specifications below when checking this part for your BOM.
The IDT71V416L12Y is a 4 Megabit (256K x 16) high-speed CMOS Static RAM. It operates on a single 3.3V supply with access times of 12ns. The device features LVTTL-compatible bidirectional I/O, JEDEC pinout for noise reduction, and separate byte enables. It is available in commercial and industrial temperature ranges.
Verify the specific suffix 'Y' corresponds to the 48-ball grid array package configuration as defined in the official ordering information. Confirm that the 'L' designation indicates the Low Power variant, which may have distinct current specifications compared to the Standard Power version. Ensure the component meets the required environmental operating range for the target application.
Select this component when a 12ns asynchronous SRAM interface is required within a 3.3V system architecture. The Low Power variant is suitable for applications where standby current reduction is prioritized over dynamic operating current. Verify compatibility with LVTTL signal levels and ensure the 48-ball BGA footprint fits the board layout constraints.
This part belongs to the IDT71V416 family of 4 Megabit static random-access memories. The series includes variants with different speed grades (10ns, 12ns, 15ns) and power profiles (Standard vs. Low). The manufacturer utilizes advanced CMOS technology to provide cost-effective solutions for high-speed memory needs in commercial and industrial environments.
IDT71V416S12Y
The 'L' suffix designates the Low Power variant of the device, which offers reduced power consumption characteristics compared to the Standard Power version.
No, the bidirectional inputs and outputs are directly LVTTL-compatible, not standard TTL.
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