Memory IC IDT71V416YL12Y product image

IDT71V416YL12Y

  • Description:IC SRAM 4MBIT PARALLEL 44SOJ
  • Series:-
  • Mfr:Renesas Electronics Corporation
  • Package:Tube

SKU:188ea088c2e0 Category: Brand:

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IDT71V416YL12Y is listed in the Memory IC range at ChipApex. The manufacturer field lists Renesas Electronics Corporation. Its product description is IC SRAM 4MBIT PARALLEL 44SOJ. Review the specifications below when checking this part for your BOM.

Memory IC specifications for IDT71V416YL12Y

  • Description:IC SRAM 4MBIT PARALLEL 44SOJ
  • Series:-
  • Mfr:Renesas Electronics Corporation
  • Package:Tube
  • Memory Type:Volatile
  • Memory Format:SRAM
  • Technology:SRAM - Asynchronous
  • Memory Size:4Mbit
  • Memory Organization:256K x 16
  • Memory Interface:Parallel
  • Clock Frequency:-
  • Write Cycle Time - Word, Page:12ns
  • Voltage - Supply:3V ~ 3.6V
  • Operating Temperature:0°C ~ 70°C (TA)
  • Mounting Type:Surface Mount
  • Package / Case:44-BSOJ (0.400", 10.16mm Width)
  • Supplier Device Package:44-SOJ
  • Access Time:12 ns
  • Grade:-
  • Qualification:-

Memory IC datasheet and documents for IDT71V416YL12Y

IDT71V416YL12Y

Memory IC Overview

The IDT71V416YL12Y is a 4Mbit (256K x 16) asynchronous static RAM manufactured by Renesas Electronics Corporation. It operates on a single 3.3V power supply and features LVTTL-compatible bidirectional data inputs and outputs. The device provides an access time of 12ns with equal read cycle and write cycle times. It utilizes a JEDEC center power and ground pinout to reduce noise and includes upper and lower byte enable pins for selective data handling. The component is housed in a 44-pin, 400 mil plastic SOJ package.

Memory IC Feature Summary

  • JEDEC center power and ground pinout configuration designed to minimize electrical noise during operation.
  • Fully static asynchronous circuitry that requires no external clocks or periodic refresh cycles.
  • Bidirectional I/O pins are directly compatible with LVTTL logic levels.
  • Independent upper and lower byte enable pins allow for granular control over 16-bit word operations.

Memory IC Applications

  • High-performance processor secondary cache memory systems
  • Buffering applications requiring fast random access
  • General-purpose high-speed memory storage

Memory IC Procurement Notes

Verify the specific ordering suffix 'YL' corresponds to the 44-pin SOJ package and 12ns speed grade. Confirm the commercial temperature range specification matches the target application environment. Check current product status as this component may be obsolete or subject to change notifications.

Memory IC Selection Notes

Select this part when a 256K x 16 organization is required with 12ns performance. Ensure the system supports a single 3.3V supply and LVTTL interface standards. Consider the 44-pin SOJ footprint constraints during PCB layout design.

Memory IC Part Context

This component belongs to the IDT71V416 family of 3.3V CMOS Static RAMs. The family offers various speed grades and package options, including TSOP Type II and BGA configurations. The 'YL' designation specifically identifies the 12ns speed grade within the 44-pin SOJ form factor.

Memory IC Replacement Considerations

Compatible substitutes include other 256K x 16 SRAMs with 12ns access times and 3.3V operation. Verify pin compatibility and voltage levels before substitution.

Memory IC FAQ

Does the IDT71V416YL12Y require a clock signal for operation?

No, it uses fully static asynchronous circuitry and does not require clocks or refresh cycles.

What is the function of the BHE and BLE pins?

BHE (Byte High Enable) and BLE (Byte Low Enable) are independent pins that allow selective reading or writing of the upper or lower 8 bits of the 16-bit data word.

IDT71V416YL12YIDT71V416YL12Y

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