IDW40G65C5XKSA1

Single Diodes Overview

The IDW40G65C5XKSA1 is a 650 V Silicon Carbide Schottky diode from Infineon's 5th Generation thinQ! family. It features a PG-TO247-3 package with continuous forward current of 40 A at case temperatures below 110°C and a peak surge current of 182 A. Key electrical parameters include a maximum DC blocking voltage of 650 V, a typical forward voltage of 1.5 V at 40 A and 25°C, and a total capacitive charge of 55 nC. The device operates within a junction temperature range of -55°C to 175°C.

Single Diodes Feature Summary

• Utilizes silicon carbide semiconductor material for benchmark switching behavior and high efficiency.
• Exhibits no reverse recovery or forward recovery characteristics, ensuring temperature-independent switching.
• Features optimized thermal design with low figure of merit (Qc x Vf) for improved system efficiency.
• Demonstrates high surge current capability and robustness against high dv/dt conditions.

Single Diodes Applications

• Switch mode power supplies
• Power factor correction circuits
• Solar inverters
• Uninterruptible power supplies

Single Diodes Procurement Notes

Verify the specific ordering suffix XKSA1 against official Infineon documentation to confirm packaging details and compliance certifications. Ensure that the procurement channel provides valid traceability for the component's RoHS status and JEDEC qualification. Confirm that the received units match the final datasheet revision 2.2 specifications regarding reverse current and avalanche testing requirements.

Single Diodes Selection Notes

Select this component when designing systems requiring high-frequency operation and reduced cooling infrastructure due to superior thermal performance. The absence of reverse recovery charge makes it suitable for applications demanding lower electromagnetic interference. Consider the 40 A continuous current rating relative to the thermal resistance of 0.8 K/W to ensure junction temperatures remain within the specified operational limits under expected load conditions.

Single Diodes Part Context

This component belongs to Infineon's 5th Generation thinQ! SiC Schottky Diode portfolio, designed to complement 650 V CoolMOS families. The thin-wafer technology enables compact designs with enhanced efficiency across all load conditions. This generation represents leading-edge silicon carbide technology aimed at increasing power density and system reliability in power electronics applications.

Single Diodes Replacement Considerations

Public confirmed substitute part numbers are not available in the provided source material.