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Product Detailed Parameters
- Description：JFET N-Channel -30V Low Noise
- Series：IF170
- Mfr：InterFET
- Package：Strip
- FET Type：N-Channel
- Voltage - Breakdown (V(BR)GSS)：-
- Drain to Source Voltage (Vdss)：30 V
- Current - Drain (Idss) @ Vds (Vgs=0)：4 mA @ 10 V
- Current Drain (Id) - Max：-
- Voltage - Cutoff (VGS off) @ Id：600 mV @ 1 nA
- Input Capacitance (Ciss) (Max) @ Vds：15pF @ 10V
- Resistance - RDS(On)：80 Ohms
- Power - Max：350 mW
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：SOT-23-3
- Supplier Device Package：SOT-23-3
- Grade：-
- Qualification：-
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Overview
The InterFET IF170AST3 is an N-channel JFET in a SOT-23 surface-mount package. It features a -30V gate-source breakdown voltage and a typical noise voltage of 1.0 nV/√Hz at 1kHz. The device offers a minimum forward transconductance of 14 mS and a typical value of 6 mS. Drain-to-source saturation current ranges from 2.6 mA to 6.5 mA, with a gate leakage current of -0.1 nA maximum. Continuous power dissipation is rated at 350 mW, supporting junction temperatures up to 150°C.
Feature Summary
- Utilizes InterFET N0132L geometry for high radiation tolerance
- Provides low noise performance suitable for sensitive amplifier stages
- Features extremely low gate leakage current for precision applications
- Supports custom test and binning options for specific parameter requirements
Applications
- Radar systems and military communications equipment
- Medical imaging systems and ultrasound equipment
- Satellite guidance and hydrophone preamplifiers
- General-purpose oscillators and signal mixers
Procurement Notes
Verify the specific suffix 'AST3' against official InterFET documentation to confirm the exact electrical binning and packaging configuration. Ensure that the SOT-23 bulk or tape-and-reel availability matches the required production volume. Confirm RoHS and REACH compliance status directly with the manufacturer before finalizing procurement specifications.
Selection Notes
Select the IF170AST3 when low noise and high gain are critical for mid-frequency amplifier designs. Compare the -30V breakdown rating against circuit requirements to ensure adequate margin. Consider the IF170B, C, or D variants if different saturation current bins are preferred. Evaluate the SOT-23 package constraints regarding thermal dissipation limits during operation.
Part Context
This component belongs to the IF170A-B-C-D series of N-channel JFETs designed for sensitive amplifier stages. It serves as a modern replacement for legacy industry standard parts such as the 2SK152, 2SK170, and 2N6451. The series provides various package options including through-hole and bare die configurations alongside the surface-mount variant.
Replacement Considerations
Publicly confirmed cross-reference equivalents include the 2SK152, 2SK170, 2N6451, 2N6452, 2N3972, MMBF4393, NSVJ3557SA3, NSVJ5908DSG5, and NSVJ2394SA3. Verify pinout compatibility and electrical parameter overlaps before substituting these components in existing designs.
