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Product Detailed Parameters
- Description：IGBT TRENCH FS 600V 100A TO220-3
- Series：TrenchStop®
- Mfr：Infineon Technologies
- Package：Tube
- IGBT Type：Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max)：600 V
- Current - Collector (Ic) (Max)：100 A
- Current - Collector Pulsed (Icm)：150 A
- Vce(on) (Max) @ Vge, Ic：2V @ 15V, 50A
- Power - Max：333 W
- Switching Energy：2.6mJ
- Input Type：Standard
- Gate Charge：310 nC
- Td (on/off) @ 25°C：26ns/299ns
- Test Condition：400V, 50A, 7Ohm, 15V
- Reverse Recovery Time (trr)：-
- Operating Temperature：-40°C ~ 175°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-220-3
- Supplier Device Package：PG-TO220-3-1
- Grade：-
- Qualification：-
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Overview
The IGP50N60TXKSA1 is a 600 V, 50 A N-channel IGBT from Infineon's TRENCHSTOP™ series. It utilizes Trench and Fieldstop technology to achieve low saturation voltage (VCE(sat) typ. 1.5 V at 25°C). The device supports a maximum junction temperature of 175°C and offers a short-circuit withstand time of 5 µs. Key electrical parameters include a DC collector current of 90 A at 25°C case temperature, gate charge of 310 nC, and switching frequencies up to 20 kHz.
Feature Summary
- TRENCHSTOP™ and Fieldstop technology for high ruggedness and tight parameter distribution
- Positive temperature coefficient in VCE(sat) enabling parallel operation
- Low EMI generation and low gate charge characteristics
- Qualified according to JEDEC standards for target applications
Applications
- Frequency converters
- Uninterrupted power supplies
Procurement Notes
Verify the specific ordering suffix against official documentation to confirm package type and compliance status. Ensure the component matches the required thermal resistance and pinout configuration for the intended PCB layout. Cross-reference the manufacturer's latest datasheet revision to validate all electrical ratings before integration into the design.
Selection Notes
Select this component for applications requiring robust performance at high temperatures up to 175°C. The positive temperature coefficient facilitates safe paralleling for higher current handling. Consider the 5 µs short-circuit withstand capability when designing protection circuits for inductive loads operating within the specified voltage and current limits.
Part Context
This part belongs to the IGP50N60T product family within Infineon's TRENCHSTOP™ portfolio. It is designed as a low-loss IGBT solution for 600 V applications. The device is housed in a PG-TO220-3 package, providing a balance of thermal performance and mechanical stability for through-hole mounting in power electronics systems.
Replacement Considerations
Direct substitutes are not explicitly confirmed in the provided source material. Verify compatibility with alternative IGBTs by matching critical parameters such as VCE(sat), Qg, and package dimensions. Consult official replacement guides or engineering support for validated cross-references.
FAQ
What is the maximum short-circuit withstand time?
The device has a short-circuit withstand time of 5 µs under specified conditions.
Does the IGP50N60TXKSA1 have an integrated diode?
No, the IGP50N60T is a standalone IGBT without an integrated anti-parallel diode.
What is the typical VCE(sat) at 25°C?
The typical collector-emitter saturation voltage is 1.5 V at 25°C with IC = 50 A.
