IGQ75N120S7XKSA1

IGQ75N120S7XKSA1

$10.17
  • Description:IGBT TRENCH 1200V 154A TO247-55
  • Series:TRENCHSTOP™

SKU:65894174a9f2 Category: Brand:

  
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Product Detailed Parameters

  • Description:IGBT TRENCH 1200V 154A TO247-55
  • Series:TRENCHSTOP™
  • Mfr:Infineon Technologies
  • Package:Tube
  • IGBT Type:Trench
  • Voltage - Collector Emitter Breakdown (Max):1200 V
  • Current - Collector (Ic) (Max):154 A
  • Current - Collector Pulsed (Icm):225 A
  • Vce(on) (Max) @ Vge, Ic:2V @ 15V, 75A
  • Power - Max:630 W
  • Switching Energy:5.13mJ (on), 3.48mJ (off)
  • Input Type:Standard
  • Gate Charge:450 nC
  • Td (on/off) @ 25°C:38ns/190ns
  • Test Condition:600V, 75A, 2.1Ohm, 15V
  • Reverse Recovery Time (trr):-
  • Operating Temperature:-40°C ~ 175°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-247-3
  • Supplier Device Package:PG-TO247-3-55
  • Grade:-
  • Qualification:-

Download product information

IGQ75N120S7XKSA1

Overview

The IGQ75N120S7 is a short-circuit rugged 1200 V TRENCHSTOP™ IGBT 7 technology device. It features a collector current of 75 A and a low saturation voltage of 2.0 V at Tvj = 175°C. The component supports an 8 µs short circuit withstand time and offers a wide range of dv/dt controllability. Packaged in TO-247PLUS – 3Pin, it is qualified for industrial applications according to JEDEC standards.

Feature Summary

  • Short-circuit ruggedness with 8 µs withstand capability
  • Low saturation voltage of 2.0 V at maximum junction temperature
  • Wide range of dv/dt controllability

Applications

  • Industrial power supplies
  • Solar energy systems

Procurement Notes

Verify the exact part number suffix against official Infineon documentation to ensure correct package and electrical specifications. Confirm that the procurement channel provides original manufacturer packaging. Check for any specific handling requirements related to electrostatic discharge protection during storage and installation.

Selection Notes

Select this component for applications requiring high short-circuit robustness and controlled switching speeds. Ensure the thermal management design accommodates the specified junction-to-case thermal resistance. Verify that the gate drive circuitry aligns with the recommended operating conditions for optimal lifetime and reliability.

Part Context

This device belongs to the TRENCHSTOP™ IGBT 7 family, designed for high-performance power switching. It utilizes advanced silicon technology to balance conduction and switching losses. The product is specifically engineered for industrial environments, offering enhanced durability compared to standard IGBTs.

Replacement Considerations

Consult official Infineon replacement guides for compatible alternatives within the IGBT7 series. Ensure any substitute matches the voltage rating, current capacity, and package dimensions. Verify that the alternative device meets the same short-circuit ruggedness requirements.

IGQ75N120S7XKSA1IGQ75N120S7XKSA1
$10.17
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