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The IGZ50N65H5XKSA1 is a high-speed fifth-generation IGBT in TRENCHSTOPTM 5 technology. It features a 650V collector-emitter voltage (VCE), a maximum DC collector current of 85A at 25°C, and a saturation voltage of 1.65V at 25°C. The device operates with a maximum junction temperature of 175°C and utilizes a PG-TO247-4 package.
Verify the specific ordering suffix XKSA1 against official Infineon documentation to confirm lead-free plating and RoHS compliance status. Ensure that the PG-TO247-4 package pinout requirements are strictly followed during assembly, specifically noting that the emitter and Kelvin emitter pins are not exchangeable.
Select this component for designs requiring optimized switching efficiency in mid-to-high frequency environments. Consider the thermal resistance characteristics and the requirement for a dedicated Kelvin emitter connection to minimize parasitic inductance effects on gate control circuitry.
This part belongs to the High Speed Series Fifth Generation product line from Infineon Technologies. It represents an evolution in TRENCHSTOPTM 5 technology designed to offer plug-and-play replacement capabilities for previous generation IGBTs while delivering superior electrical performance metrics.
Officially documented as a plug-and-play replacement for previous generation IGBTs. No specific substitute part numbers are confirmed in the provided datasheet.
No, the emitter and Kelvin emitter pins are not exchangeable. Their exchange might lead to malfunction.
The maximum operating junction temperature is 175°C.
The internal emitter inductance does not affect the gate control circuitry if bypassed by using the emitter sense pin.