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The IHW30N140R5LXKSA1 is a reverse-conducting IGBT with a monolithic body diode, rated at 1400 V collector-emitter voltage and 30 A DC collector current. It features a PG-TO247-3 package with an internal emitter inductance of 13 nH. The device exhibits a typical saturation voltage of 1.65 V at 25°C and a gate charge of 210 nC. Soft turn-off energy is 0.147 mJ at 25°C. The integrated diode has a forward voltage of 1.6 V at 25°C. Operating junction temperature ranges from -40°C to 175°C.
Verify the component against the official Infineon datasheet revision 1.10 dated June 7, 2024. Confirm that the ordering suffix XKSA1 corresponds to the standard PG-TO247-3 tube packaging. Ensure the specific batch meets the RoHS compliance and halogen-free requirements defined in the product documentation.
Select this component for high-frequency resonant circuits where low EMI and tight parameter distribution are required. The positive temperature coefficient facilitates parallel operation without complex current balancing. Verify that the application strictly utilizes soft switching conditions to protect the monolithic body diode.
This part belongs to Infineon's RC-H Reverse Conducting IGBT series, specifically the R5L generation. It is designed to offer improved thermal performance and reduced power dissipation compared to previous iterations. The XKS suffix indicates the specific tape-and-reel or tube configuration for mass production.
Direct replacements include IHW25N140R5LXKSA1 (25A rating) and IHW30N120R5XKSA1 (1200V rating). Verify pinout compatibility and thermal resistance characteristics before substitution.
No, the datasheet specifies that the powerful monolithic body diode is designed for soft commutation only.
The maximum mounting torque is 0.6 Nm.
No, the product is not qualified according to AEC-Q100 or AEC-Q101 documents.