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The IHW40N120R5XKSA1 is a single Reverse Conducting IGBT from the Resonant Switching Series, utilizing TRENCHSTOP technology. It integrates an anti-parallel body diode in a PG-TO247-3 package. Key electrical parameters include a collector-emitter voltage of 1200 V and a continuous collector current of 80 A at 25°C. The saturation voltage is 1.55 V at 25°C, with a maximum operating junction temperature of 175°C.
Verify component authenticity by checking the manufacturer's marking against official datasheet specifications. Confirm RoHS compliance and halogen-free status as documented. Ensure ordering suffixes match the exact part number variant required for the specific application design.
Select this component for resonant switching applications requiring integrated reverse conduction. Evaluate thermal resistance values relative to the expected case temperature and power dissipation requirements. Consider the soft switching energy characteristics when designing gate drive circuits for optimal efficiency.
This device belongs to Infineon's TRENCHSTOP family of silicon IGBTs. It is specifically categorized under the Resonant Switching Series, distinguishing it from standard hard-switching or high-speed variants within the broader product portfolio.
Consult official replacement guides for equivalent Reverse Conducting IGBTs. Verify that substitute components maintain compatible voltage ratings, current capabilities, and package dimensions for direct integration.
The maximum non-repetitive peak collector current (ICSM) is 200 A, limited by the maximum junction temperature and pulse width constraints.
No, the product is not qualified according to the AEC-Q100 or AEC-Q101 documents of the Automotive Electronics Council.
The typical turn-off energy under soft switching conditions (dv/dt = 200 V/µs) at 25°C is 0.22 mJ.