IKB40N65ES5ATMA1

Overview

The IKB40N65ES5ATMA1 is a single N-channel Insulated Gate Bipolar Transistor (IGBT) from Infineon Technologies, belonging to the TRENCHSTOP™ 5 series. It utilizes silicon technology and is housed in a surface-mount PG-TO263-3 (D2PAK-3) package. The device features a maximum collector-emitter voltage of 650 V and a continuous collector current of 79 A at 25°C. Key electrical parameters include a gate-emitter leakage current of 100 nA, a gate charge of 95 nC, and a power dissipation rating of 230 W. Switching characteristics measured at 400 V, 40 A, 10 Ohm, and 15 V include an turn-off energy of 860 µJ, a turn-on energy of 400 µJ, a turn-off delay time of 19 ns, and a fall time of 130 ns. The reverse recovery time is 73 ns. The component operates within a junction temperature range of -40°C to +175°C.

Feature Summary

• Incorporates Trenchstop field-stop technology for optimized switching performance and low conduction losses.
• Designed with a rugged structure capable of withstanding high short-circuit currents up to 160 A.
• Features a standard gate input configuration compatible with common driver interfaces.

Applications

• Industrial motor drives and servo systems
• Uninterruptible power supplies (UPS)
• High-frequency welding inverters

Procurement Notes

Verify the specific ordering suffix ATMA1 to confirm the reel packaging format and tape specifications required for automated surface-mount assembly. Ensure that the procurement channel provides original manufacturer documentation to validate the TRENCHSTOP™ 5 generation and RoHS compliance status prior to integration into production lines.

Selection Notes

Select this component when a surface-mount solution is required for 650 V applications demanding high current handling up to 79 A. The TO-263-3 package offers a balance between thermal performance and PCB space efficiency compared to through-hole alternatives. Consider the specific switching energy values for thermal management calculations in hard-switching environments.

Part Context

This discrete IGBT is part of Infineon's broader TRENCHSTOP™ portfolio, which integrates anti-parallel diodes or standalone switches for power conversion. The PG-TO263-3 package is widely used in medium-power industrial electronics where reliable surface-mount mounting is preferred over traditional through-hole technologies for improved assembly automation.

Replacement Considerations

Direct pin-compatible replacements within the same package and voltage class should be verified against the official replacement guide. Cross-referencing switching energies and saturation voltages is critical when substituting with other manufacturers' devices to ensure thermal and electrical compatibility.

FAQ

What is the maximum short-circuit withstand time for the IKB40N65ES5ATMA1?

The datasheet specifies a maximum short-circuit withstand time, but the exact duration value is not provided in the available summary data; verification via the full technical specification sheet is required.

Does the IKB40N65ES5ATMA1 include an integrated anti-parallel diode?

The product description identifies it as a single IGBT. Unlike modules such as the IKZA series, this discrete component does not explicitly list an integrated anti-parallel diode in its primary configuration details.

What are the test conditions for the specified switching energies?

The turn-off energy of 860 µJ and turn-on energy of 400 µJ are measured under standard test conditions of 400 V collector-emitter voltage, 40 A collector current, 10 Ohm gate resistance, and 15 V gate drive voltage.