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The IKD04N60RF is a 600 V reverse conducting IGBT discrete device from Infineon’s TRENCHSTOP RC series. It integrates an IGBT and a fast recovery diode in a single PG-TO252-3 package. Key electrical parameters include a collector-emitter saturation voltage of 1.65 V, a continuous collector current of 7.5 A at 25°C, and a power dissipation of 6.8 W. The component supports switching frequencies up to 20 kHz with turn-off energy of 0.62 mJ and turn-on energy of 0.95 mJ under hard switching conditions.
Verify the specific ordering part number suffix (e.g., ATMA1) against official Infineon documentation to ensure correct packaging and tape-and-reel specifications. Confirm the current lifecycle status, as this component may be subject to change or obsolescence. Always cross-reference the latest datasheet version for thermal resistance and absolute maximum ratings before finalizing procurement orders.
Select this component for designs requiring a compact half-bridge solution without external diodes. Ensure the application operates within the 20 kHz frequency limit and respects the 6.8 W power dissipation constraint. Verify that the required current handling aligns with the 7.5 A continuous rating at ambient temperature. Consider thermal management strategies suitable for the TO-252-3 footprint.
This device belongs to the TRENCHSTOP RC family, which combines high-voltage IGBTs with integrated fast recovery diodes. It is engineered for cost-effective, space-saving implementations in medium-power conversion systems. The integration reduces component count and simplifies layout compared to discrete IGBT-diode pairs.
Publicly confirmed substitute part numbers are not available in the provided source material. Consult official Infineon replacement guides for qualified alternatives.