IKU15N60R

Overview

The IKU15N60R is a single Insulated Gate Bipolar Transistor (IGBT) from Infineon Technologies, featuring an integrated anti-parallel diode. It belongs to the Trenchstop RC series and utilizes silicon technology. The device supports a maximum collector-emitter voltage of 600 V and a continuous collector current of 30 A at 25°C. It operates within a temperature range of -40°C to +175°C and offers a power dissipation capacity of 250 W. The component is housed in a PG-TO251-3 package.

Feature Summary

• Integrated anti-parallel diode for simplified circuit design
• Trenchstop RC technology for optimized switching performance
• High thermal stability with extended operating temperature range

Applications

• Motor drives
• Power supplies
• Inverters

Procurement Notes

Verify the specific ordering suffix against official Infineon documentation to ensure correct packaging and variant selection. Confirm that the requested part matches the exact electrical specifications required for the application. Cross-reference datasheet parameters such as saturation voltage and switching times before procurement.

Selection Notes

Select this IGBT for applications requiring high current handling and integrated freewheeling capabilities. Consider the TO251 package for through-hole mounting requirements. Evaluate thermal management needs based on the 250 W power dissipation rating and junction temperature limits.

Part Context

This component is part of Infineon's Trenchstop RC family, designed for efficient power conversion. It combines IGBT and diode technologies in a single package to reduce board space and parasitic inductance. The series targets medium-power industrial applications.

Replacement Considerations

Consult official replacement lists for direct substitutes. Verify pin compatibility and electrical ratings when considering alternative models.