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The IKW15T120FKSA1 is a TrenchStop IGBT in Fieldstop technology with an integrated anti-parallel EmCon HE diode, housed in a TO-247-3 package. It features a maximum collector-emitter voltage of 1200 V and a continuous collector current of 15 A at 25°C. The device exhibits a typical saturation voltage of 1.95 V and a forward voltage of 1.6 V for the diode. It supports a short-circuit withstand time of 10 µs and operates within a junction temperature range of -55°C to 175°C.
Verify the specific suffix FKSA1 against official Infineon documentation to confirm packaging details and tape-and-reel specifications. Ensure the component meets RoHS compliance requirements for your target market. Cross-reference the datasheet revision date to confirm parameter accuracy before finalizing procurement orders.
Select this component for applications requiring low conduction losses and robust short-circuit capability. The integrated diode simplifies circuit design by eliminating external freewheeling diodes. Consider the thermal resistance characteristics when designing heatsinking solutions for high-frequency operation.
This part belongs to the TrenchStop series, representing advanced IGBT technology from Infineon. It is designed to replace older planar MOSFET designs in medium-power applications. The family emphasizes efficiency improvements through reduced saturation voltage and optimized switching characteristics.
Official substitutes include IKW15T120 and IKW15T120H3. Verify pin compatibility and thermal performance parameters when transitioning between these variants to ensure system reliability.